Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
申请人:AIR PRODUCTS AND CHEMICALS, INC.
公开号:US20160122590A1
公开(公告)日:2016-05-05
Slurries and associated methods and systems for the chemical mechanical planarization (CMP) of tungsten-containing films on semiconductor wafers are described. The slurries comprise abrasive particles, activator-containing particles, peroxygen oxidizer, pH adjustor, and the remaining being water. The slurries have a pH in the range of 4 to 10; preferably 5 to 9; more preferably 6 to 8.