Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process
申请人:Sharp Laboratories of America, Inc.
公开号:US20040146448A1
公开(公告)日:2004-07-29
A method of preparing a hafnium nitrate thin film includes placing phosphorus pentoxide in a first vessel; connecting the first vessel to a second vessel containing hafnium tetrachloride; cooling the second vessel with liquid nitrogen; dropping fuming nitric acid into the first vessel producing N
2
O
5
gas; allowing the N
2
O
5
gas to enter the second vessel; heating the first vessel until the reaction is substantially complete; disconnecting the two vessels; removing the second vessel from the liquid nitrogen bath; heating the second vessel; refluxing the contents of the second vessel; drying the compound in the second vessel by dynamic pumping; purifying the compound in the second vessel by sublimation to form Hf(NO
3
)
4
, and heating the Hf(NO
3
)
4
to produce HfO
2
for use in an ALCVD process.
制备氮化铪薄膜的方法包括:将五氧化二磷放入第一个容器中;将第一个容器连接到含有四氯化铪的第二个容器上;用液态氮冷却第二个容器;向第一个容器中滴加烟酸,产生N2O5气体;将N2O5气体进入第二个容器中;加热第一个容器,直至反应基本完成;断开两个容器的连接;将第二个容器从液态氮浴中取出;加热第二个容器;回流第二个容器中的物质;通过动态抽气将第二个容器中的化合物干燥;通过升华纯化第二个容器中的化合物,形成Hf(NO3)4;加热Hf(NO3)4以产生HfO2,用于ALCVD过程。