Germane--zirconium (2/1) | 12285-75-5

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物
• 英文名称: Germane--zirconium (2/1)
• 英文别名: germane;zirconium
• CAS: 12285-75-5
• 化学式: Ge₂Zr
• 分子量: 236.404
• InChiKey: ZZNGGSUOLOHMGA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.91
• 重原子数：
  3
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  锆 、 、 Germane--zirconium (2/1) 生成
  参考文献：
  名称：

  The lead-zirconium system: binary phases and a series of interstitial compounds of the host Zr5Pb3

  摘要：

  The Pb-Zr system contains the phases Zr(approximately 5.8)Pb (Cr3Si-type), Zr5Pb3 (Mn5Si3) and Zr5Pb4 (Ti5Ga4). Zr5Pb4 as a substoichiometric region above approximately 800-degrees-C, extending to about Zr5Pb3.65 at 1000-degrees-C. Reactive powder sintering in sealed Ta containers at 1000-1350-degrees-C is the most effective route for the synthesis of pure phases of both the binaries and the interstitial derivatives Zr5Pb3Z. Twenty examples of the latter were obtained with Z = Al, Si, P, S, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Ag, Cd, In, Sn, Sb, Te, (Pb), (second period Z were not investigated). Single crystals for Z = Al, Cd, Zn, Pb0.87, Pb0.94 were obtained by metal flux or vapor phase transport reactions, and the last three were quantified by X-ray crystallography. Volume trends as a function of group and period follow metal/covalent radii trends for Z fairly well.

  DOI：

  10.1016/0925-8388(93)90402-9
• 作为产物：
  描述：

  锆 、 锗烷 以 solid 为溶剂， 生成 Germane--zirconium (2/1)
  参考文献：
  名称：

  Annealing of thin Zr films on Si 1−x Ge x (0≤ x ≤1): X-ray diffraction and Raman studies

  摘要：

  X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si1-xGex epilayers (0 less than or equal to x less than or equal to 1). The C49 Zr(Si1-xGex)(2) is the unique phase obtained after complete reaction. ZrSi1-xGex is formed as an intermediate phase. The C49 formation temperature T-f is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x = 0.33, a film microstructure change was observed. Films annealed at temperatures close to T-f are continuous and relaxed. Annealing at T > T-f leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds T-f. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between - 0.3 and - 3.5 GPa for 0 less than or equal to x less than or equal to 1 which corresponds to a strain in the range (-0.11, - 1.15%). X-ray and Raman determinations are in good agreement. (C) 2002 Elsevier Science Ltd. All rights reserved.

  DOI：

  10.1016/s0022-3697(02)00175-0