四硝酸钛 | 12372-56-4

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 过渡金属氧阴离子化合物
• 中文名称: 四硝酸钛
• 中文别名: 四硝酸钛(IV)
• 英文名称: Titanium(4+);tetranitrate
• 英文别名: titanium(4+);tetranitrate
• CAS: 12372-56-4
• 化学式: N₄O₁₂Ti
• 分子量: 295.9
• InChiKey: QDZRBIRIPNZRSG-UHFFFAOYSA-N

物化性质

• 熔点：
  57-59 °C(lit.)

计算性质

• 辛醇/水分配系数(LogP)：
  -0.96
• 重原子数：
  17
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  252
• 氢给体数：
  0
• 氢受体数：
  12

安全信息

• 危险品标志：
  O,C
• 危险类别码：
  R8
• 危险品运输编号：
  UN 1477 5.1/PG 2
• 安全说明：
  S17

反应信息

• 作为反应物：
  描述：

  四硝酸钛 生成 氧化钛(IV),金红石
  参考文献：
  名称：

  ULYANOVA, T. M.;ERMOLENKO, I. N.;SHIPILO, V. B.;SHISHONOK, N. A., TEXN. I TEXNOL. VYSOK. DAVLENIJ: SB. NAUCH. DOKL. VYEZD. ZASED. SEKTS. PA+

  摘要：

  DOI：

文献信息

• Preparation of titanates
  申请人：Murata Manufacturing Co., Ltd.

  公开号：US04061583A1

  公开（公告）日：1977-12-06

  A process for the preparation of a titanate which comprises adding an aqueous solution containing ions of titanium and at least one metal selected from the group consisting of Ba, Ca, Sr, Zn, Cd and Pb to an aqueous alkaline solution containing hydrogen peroxide, recovering the resulting precipitate and heating the precipitate at a temperature not lower than 100.degree. C to give the titanate of the metal as used in uniformly fine particles. The resulting titanate can be used as ceramic materials for electronic elements.

  一种制备钛酸盐的方法，包括将含有钛离子和至少一种金属（选自Ba、Ca、Sr、Zn、Cd和Pb）离子的水溶液加入含有过氧化氢的水性碱性溶液中，回收所得的沉淀物并将其加热至不低于100℃的温度，以获得金属钛酸盐，其粒子均匀细小。所得的钛酸盐可用作电子元件的陶瓷材料。
• PAI, VERNEKER VENCATESH R.
  作者：PAI, VERNEKER VENCATESH R.

  DOI：——

  日期：——
• TROYAN, M. M.;GOLOBORODKO, A. P.;VERESHCHAK, V. G., 14 BCEC. NAUCH.-TEXN. KONF. PO TEXNOL. NEORGAN. VESHCHESTV I MINERAL. UDO+
  作者：TROYAN, M. M.、GOLOBORODKO, A. P.、VERESHCHAK, V. G.

  DOI：——

  日期：——
• Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films
  作者：Charles J. Taylor、David C. Gilmer、Daniel G. Colombo、G. D. Wilk、Stephen A. Campbell、Jeff Roberts、Wayne L. Gladfelter

  DOI：10.1021/ja984446f

  日期：1999.6.1

  A side-by-side comparison of the TiO2 deposition kinetics and the corresponding microstructures was studied. The two precursors were titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate, and all depositions were conducted at low pressures (<10(-4) Torr) in an ultrahigh vacuum chemical vapor deposition reactor. For both precursors deposition kinetics were qualitatively similar and exhibited three distinct regimes as a function of temperature. At the lowest temperatures, growth was limited by the rate of precursor reaction on the substrate surface. At intermediate temperatures flux-limited growth was obtained, and at the highest temperatures the growth rates decreased with increasing temperatures. The overall behavior was modeled quantitatively for each precursor using a two-step mechanism involving reversible adsorption followed by irreversible reaction. Titanium(IV) nitrate exhibited a lower activation energy of reaction (E-r = 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (E-r = 135 kJ/mol). The film microstructures were examined using transmission and scanning electron microscopy and X-ray diffraction. Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate-limited regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable. The importance of precursor surface coverage and diffusion on this effect is described.