COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US20150322212A1
公开(公告)日:2015-11-12
A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes;
Formula (1): R
1
a
R
2
b
Si(R
3
)
4-(a+b)
wherein R
1
is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3):
a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3;
Formula (2): R
4
a
R
5
b
Si(R
6
)
4-(a+b)
wherein, R
4
is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3):
a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.
一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物,包括:作为硅烷的,一种可水解的硅烷,其水解产物或其水解-缩合产物,其中可水解的硅烷包括公式(1)的可水解硅烷或含有公式(1)的可水解硅烷与公式(2)的可水解硅烷的组合物,其在所有硅烷中的摩尔分数小于50%;公式(1):R1aR2bSi(R3)4-(a+b),其中R1是含有公式(1-1),公式(1-2)或公式(1-3)的有机基团:a为1,b为0到2的整数,其中a+b为1到3的整数;公式(2):R4aR5bSi(R6)4-(a+b),其中R4是含有公式(2-1),公式(2-2)或公式(2-3)的有机基团:a为1,b为0到2的整数,其中a+b为1到3的整数。