indium sulfate

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 后过渡金属氧阴离子化合物
• 英文名称: indium sulfate
• 英文别名: indium(III) sulphate；indium sulphate；Indium(3+);sulfate
• 化学式: 2In*3O₄S
• 分子量: 517.831
• InChiKey: VTDGMSWVLQMCHV-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  -1.72
• 重原子数：
  6
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  88.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  indium sulfate 在 HCl 作用下， 以 水 为溶剂， 生成 indium(III) sulfide
  参考文献：
  名称：

  The deposition of Group 6A-derived inorganic semiconductor films as studied by quartz crystal microgravimetry

  摘要：

  This paper focuses on the use of QCM for the study of semiconductor film deposition processes. Specifically the electrosynthesis of metal chalcogenides (In2S3, CdS, and CdTe) is considered. A brief background is first given for electrodeposition as a process candidate for semiconductor film preparation. Previous studies are reviewed on the use of QCM (and specifically EQCM) in this area. New combined voltammetry-EQCM data are presented for the oxidative deposition of sulfur on polycrystalline Au surfaces from alkaline sulfide baths. The anodic growth of CdS films and the cathodic electrosynthesis of In2S3 are studied by the combined approach. Finally, data are presented on the cathodic electrosynthesis of CdTe films using EQCM in a rotating disc electrode (RDE) configuration. From an instrumental perspective, the presented data illustrate the virtues of combining the QCM technique with cyclic voltammetry, coulometry, and hydrodynamic (RDE) voltammetry for studies of semiconductor film deposition. (C) 2000 Elsevier Science Ltd. All rights reserved.

  DOI：

  10.1016/s0013-4686(00)00472-2
• 作为产物：
  描述：

  生成 indium sulfate
  参考文献：
  名称：

  Winkler, C., Journal fuer Praktische Chemie (Leipzig), 1867, vol. 102, p. 290 - 291

  摘要：

  DOI：
• 作为试剂：
  描述：

  吲哚 、 2,4,4-三甲氧基查尔酮 在 indium sulfate 作用下， 以 乙醇 为溶剂， 反应 6.0h， 以89%的产率得到3-(2,4-dimethoxyphenyl)-3-(1H-indol-3-yl)-1-(4-methoxyphenyl)propan-1-one
  参考文献：
  名称：

  Synthesis and in vitro cytotoxicity study of 3-(1H-indol-3-yl)-1,3-diphenylpropan-1-ones

  摘要：

  A series of 3-(1H-indol-3-yl)-1,3-diphenylpropan-1-ones 3a-l were synthesized in good to excellent yield by Michael addition of indole 1 with alpha,beta-unsaturated ketones 2a-l in presence of indium(III) sulphate (20 mol%). The structure of the title compounds were established by H-1 NMR, C-13 NMR, mass and elemental analysis. All the synthesized compounds were evaluated for in vitro cytotoxicity against five different cancer cell lines such as ACHN (human kidney adenocarcinoma), Panc1 (pancreatic), Calu1 (lung), H460 (non small cell lung), HCT116 (human colon cancer cell) and MCF10A (normal breast epithelium) using propidium iodide staining assay protocol. The result showed that the compounds 3e and 3l have excellent cytotoxic activity with the IC50 value ranging from 1.4-2.7 to 2.4-3.4 mu M, respectively, in comparison with the other compounds, Flavopiridol and Gemcitabine were employed as a positive control. The findings conferred 3-(1H-indol-3-yl)-1,3-diphenylpropan-1-ones seem to be promising candidates for the development of new anticancer drugs.

  DOI：

  10.1007/s00044-013-0875-y

文献信息

• Electrodeposition and Characterization of CulnSe2 Thin Films
  作者：Laurent Thouin、Jacques Vedel

  DOI：10.1149/1.2048675

  日期：1995.9.1

  Copper indium diselenide (CuInSesub 2}) presents a bandgap energy 0.95 < Esub g} < 1.04 eV and a light absorption coefficient very well suited to the photovoltaic conversion of solar energy. Investigations have been done to prepare this material by electrodeposition in order to find a process that decreases the total cost of the devices. The codeposition process of the Cu-In-Se system has been studied

  二硒化铜铟 (CuInSesub 2}) 具有 0.95 < Esub g} < 1.04 eV 的带隙能量和非常适合太阳能光伏转换的光吸收系数。已经进行了研究以通过电沉积制备这种材料，以找到一种降低设备总成本的方法。研究了Cu-In-Se系统的共沉积过程。在退火处理之前和之后制备电沉积薄膜并分析它们的化学成分。薄膜的整体组成取决于到达电极表面的物质的扩散通量比。当溶液中 In(III) 过量时，Se(IV) 和 Cu(II) 助熔剂的比例是设定成分的关键参数。较低浓度的 In(III) 涉及元素硒的沉积。在这种情况下，电沉积过程受到三种物质扩散的限制。为了预测薄膜的化学成分，可以估计扩散通量。
• Terahertz radiation from nonstoichiometric CuInSe2 films excited by femtosecond laser pulses
  作者：R. Adomavičius、A. Krotkus、J. Kois、S. Bereznev、E. Mellikov

  DOI：10.1063/1.2126796

  日期：2005.11.7

  report on the observation of efficient terahertz radiation from the surface of CuInSe2 excited by femtosecond laser pulses. Terahertz radiation emitted by polycrystalline CuInSe2 layers manufactured by using electrodeposition technology was as powerful as the signals radiated by single-crystalline semiconductor surfaces. It has been found that terahertz radiation efficiency is critically dependent on

  我们报告了从飞秒激光脉冲激发的 CuInSe2 表面观察到的有效太赫兹辐射。使用电沉积技术制造的多晶 CuInSe2 层发射的太赫兹辐射与单晶半导体表面辐射的信号一样强大。已经发现太赫兹辐射效率严重依赖于 CuInSe2 层的化学计量。双脉冲激发实验的结果表明，CuInSe2 样品光激发表面的太赫兹辐射是由这些表面存在的内置电场引起的。
• Electrodeposition of In‐Se, Cu‐Se, and Cu‐In‐Se Thin Films
  作者：R. N. Bhattacharya、A. M. Fernandez、M. A. Contreras、J. Keane、A. L. Tennant、K. Ramanathan、J. R. Tuttle、R. N. Noufi、A. M. Hermann

  DOI：10.1149/1.1836548

  日期：1996.3.1

  slow-cooled (3 C/min). The films are characterized by electron microprobe analysis, inductive-coupled plasma spectrometry, X-ray diffraction analysis, Auger electron spectroscopy, and scanning electron microscopy. The as-deposited precursor films are loaded in a physical evaporation chamber and addition In or Cu and Se are added to the film to adjust the final composition to CuInSesub 2}. The device fabricated

  铟-硒、铜-硒和铜-铟-硒薄膜已通过电沉积技术在钼基板上制备。电沉积前体是在不同的电位、pH 值和沉积时间下制备的。通过在钼上电沉积初始铜层 (500 埃}) 提高了硒化铟在钼基板上的附着力和均匀性。薄膜（In-Se、Cu-Se 和 Cu-In-Se）在 Ar 中在 250 和 450 C 下退火 15 分钟，然后缓慢冷却（3 C/min）。薄膜的特征在于电子微探针分析、电感耦合等离子体光谱、X 射线衍射分析、俄歇电子光谱和扫描电子显微镜。将沉积的前体膜装入物理蒸发室，并将添加的 In 或 Cu 和 Se 添加到膜中以将最终组成调整为 CuInSesub 2}。使用电沉积 Cu-In-Se 前体层制造的器件的太阳能电池效率为 9.4%。
• A Novel Method for the Preparation of Inorganic Sulfides and Selenides. I. Binary Materials and Group II–VI Phosphors
  作者：Dominic A. Davies、Aron Vecht、Jack Silver、Paul J. Marsh、John A. Rose

  DOI：10.1149/1.1393268

  日期：——

  A novel method for the synthesis of wide range of metal sulfides and selenides is described. Polysulfide solutions formed by the dissolution of sulfur in hydrazine monohydrate have been shown to contain the hexasulfide and tetrasulfide anions. The action of these solutions, or their selenium analogues, with a range of transition and main group metal salt solutions yields a precipitate, which after

  描述了一种合成多种金属硫化物和硒化物的新方法。硫在肼一水合物中溶解形成的多硫化物溶液已被证明含有六硫化物和四硫化物阴离子。这些溶液或其硒类似物与一系列过渡金属和主族金属盐溶液的作用产生沉淀，在高温下烧制后，形成结晶金属硫化物或硒化物。这种制备金属硫属化物的方法已扩展到一些具有良好发光性能的 II-VI 族磷光体。
• CuS, In2S3 and CuInS2 nanoparticles by microwave-assisted solvothermal route and their electrochemical studies
  作者：Mathato P. Motaung、Damian C. Onwudiwe、Lei Wei、Chaogang Lou

  DOI：10.1016/j.jpcs.2021.110319

  日期：2022.1

  The synthesis of CuS, In2S3 and CuInS2 nanoparticles by microwave irradiation of single source precursors is reported. Monodispersed nanoparticles with spherical morphology, whose average particle size were 2.3 nm (CuS) and 15.2 (In2S3) were obtained for the binary sulphides, while the ternary nanoparticles (CuInS2) displayed spindle shape morphology with some degree of agglomeration. The CuS, In2S3

  报道了通过单源前驱体的微波辐射合成CuS、In 2 S 3和CuInS 2纳米颗粒。对于二元硫化物，获得了具有球形形态的单分散纳米粒子，其平均粒径为 2.3 nm (CuS) 和 15.2 (In 2 S 3 )，而三元纳米粒子 (CuInS 2 ) 显示出具有一定程度团聚的纺锤形形态。CuS、In 2 S 3和 CuInS 2分别呈现六方晶相、斜方晶相和纤锌矿相。使用电子阻抗谱 (EIS)、循环和方波伏安法 (CV 和 SWV) 研究了纳米颗粒的电化学性质。循环伏安测量的结果表明，改性电极在 5 mM [Fe(CN)] 4- /[Fe(CN)] 3-水性电解质中表现出可逆的氧化还原反应和典型的法拉第伪电容行为。发现玻璃碳电极 (GCE) 上每个电极的评估阳极电流密度遵循以下顺序：CuS (2.24 A/m 2 ) > GCE (1.17 A/m 2 ) > CuInS 2 (0.699 A/m