Chemical methods of dispergation of metallic phases
作者:B. P. Tarasov、E. E. Fokina、V. N. Fokin
DOI:10.1007/s11172-011-0193-9
日期:2011.7
The results of a cycle of works on the chemical dispergation of intermetallic compounds and alloys were summarized and analyzed. The chemical dispergation occurs in a hydrogen or ammonia atmosphere in the temperature range from 20 to 500 °C and a pressure of 0.5–2.0 MPa. The phase transformations were studied. The conditions suitable for the production of polymetallic phase powders of various degrees of dispersity were determined.
Electrochemically Prepared Precursors for the Formation of Non‐Oxides
作者:Christian Rüssel、Ralph Zahneisen
DOI:10.1149/1.2221243
日期:1992.9.1
Various metals, such as Ca, Mg, Al, Ti, Cr, Y, Zr, and Ta were anodically dissolved in an organic electrolyte composed of propylamine, acetonitrile, and tetrabutylammonium bromide. The electrode reactions were completely irreversible. At the cathode, the organic amine was reduced to the corresponding anion and gaseous hydrogen, at the anode the metals were oxidized and metal-amino compounds were formed
各种金属,如 Ca、Mg、Al、Ti、Cr、Y、Zr 和 Ta 阳极溶解在由丙胺、乙腈和四丁基溴化铵组成的有机电解质中。电极反应是完全不可逆的。在阴极,有机胺被还原成相应的阴离子和气态氢,在阳极,金属被氧化并形成金属-氨基化合物
Sodium azide as a reagent for solid state metathesis preparations of refractory metal nitrides
作者:Andrew L. Hector、Ivan P. Parkin
DOI:10.1016/0277-5387(94)00314-5
日期:1995.4
Abstract Thermal initiation (∼ 300°C) of a reaction between sodium azide and anhydrous metal chlorides (LaCl3, SmCl3, TiCl3, ZrCl4, HfCl4, VCl3, TaCl5, CrCl2, WCl6 and MnCl2) in sealed evacuated ampoules rapidly produces binary metal nitrides, dinitrogen and sodium chloride. The metal nitrides were purified by trituration with methanol and characterized by powder X-ray diffraction, scanning electron
promoters; however, the promoting mechanism remains essentially unclear. Li, when in the imide form, is shown to synergize with 3d transition metals or their nitrides TM(N) spreading from Ti to Cu, leading to universal and unprecedentedly high catalyticactivities in NH3 decomposition, among which Li2NHMnN has an activity superior to that of the highly active Ru/carbon nanotube catalyst. The catalysis is
Tungsten nitride (WNx ) thin films were grown by atomic layer deposition (ALD) within the temperature range of 200-350°C from diborane (B 2 H 6 ), tungsten hexafluoride (WF 6 ), and ammonia (NH 3 ) for application to a contact barrier layer in dynamic random access memory (DRAM). Herein, B 2 H 6 was used as an additional reducing agent to produce a low-resistivity ALD-WN x film, and its resistivity
氮化钨 (WN x ) 薄膜通过原子层沉积 (ALD) 在 200-350°C 的温度范围内从乙硼烷 (B 2 H 6 )、六氟化钨 (WF 6 ) 和氨 (NH 3 ) 中生长,用于应用于动态随机存取存储器 (DRAM) 中的接触势垒层。在本文中,B 2 H 6 用作附加还原剂以制备低电阻率 ALD-WN x 薄膜,其电阻率在 300-410 μΩ cm 范围内,取决于约 10 nm 厚的沉积条件电影。随着沉积温度的升高,观察到生长速率增加,但在 275 至 300°C 的温度范围内获得了几乎恒定的约 0.28 nm/循环的生长速率。沉积膜的特性,包括电阻率、W/N 比、密度、B 和 F 杂质含量以及相,受沉积温度和 B 2 H 6 流速的影响。随着沉积温度和B 2 H 6 流量的增加,W/N比和薄膜密度增加,杂质含量减少,导致薄膜电阻率降低。发现增加的 W/N 比有利于形成面心立方 β-W