Acenaphthylen-5-OL | 112673-68-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 吖萘类
• 英文名称: Acenaphthylen-5-OL
• CAS: 112673-68-4
• 化学式: C₁₂H₈O
• 分子量: 168.19
• InChiKey: HVCHCXNVRJNHNX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140045123A1

  公开（公告）日：2014-02-13

  A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved in dissolution contrast.

  一种聚合物，包括由具有支链烷基的萜酸酯单体衍生的重复单元，用于形成抗蚀组合物。在经过曝光、PEB和有机溶剂显影处理后，抗蚀组合物在溶解对比度方面得到改善。
• PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND
  申请人：SATO Mitsuo

  公开号：US20120258402A1

  公开（公告）日：2012-10-11

  A photoresist composition includes a polymer that includes a structural unit shown by the following formula (1), and a photoacid generator. R 1 in the formula (1) represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z represents a group that forms a divalent alicyclic group having 3 to 20 carbon atoms together with a carbon atom bonded to X, X represents an alkanediyl group having 1 to 6 carbon atoms, Y represents a hydrogen atom or —CR 2 R 3 (OR 4 ), and R 2 to R 4 independently represent a hydrogen atom or a monovalent hydrocarbon group, provided that R 3 and R 4 optionally bond to each other to form a cyclic ether structure together with a carbon atom bonded to R 3 and an oxygen atom bonded to R 4 .

  一种光阻剂组合物包括一个聚合物，该聚合物包括下式（1）所示的结构单元，以及一个光酸发生剂。在式（1）中，R1代表氢原子、氟原子、甲基基团或三氟甲基基团，Z代表与与X键合的碳原子一起形成具有3到20个碳原子的二价脂环族基团，X代表具有1到6个碳原子的脂肪二基基团，Y代表氢原子或—CR2R3(OR4)，R2到R4独立地代表氢原子或一价烃基团，其中R3和R4可选择地相互键合以与与R3键合的碳原子和与R4键合的氧原子一起形成环状醚结构。
• PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION
  申请人：JSR CORPORATION

  公开号：US20130230804A1

  公开（公告）日：2013-09-05

  A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A − represents —N − —SO 2 —R D , —COO − , —O − or —SO 3 − . —SO 3 − does not directly bond to a carbon atom having a fluorine atom. R D represents a linear or branched monovalent hydrocarbon group, or the like. X + represents an onium cation. -A − X + (1)

  一种图案形成方法，包括使用辐射敏感组合物在基板上提供抗蚀膜。曝光抗蚀膜。使用显影剂溶液显影曝光的抗蚀膜。显影剂溶液包括不少于80％的有机溶剂。辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感酸发生剂。第一聚合物包括具有酸不稳定基团的结构单元。辐射敏感组合物的一个或多个组分具有由公式（1）表示的基团。A−表示—N−—SO2—RD，—COO−，—O−或—SO3−。—SO3−不直接与具有氟原子的碳原子结合。RD表示线性或支链的一价碳氢基团等。X+表示离子上阳离子。-A−X+（1）
• PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION
  申请人：JSR CORPORATION

  公开号：US20130224661A1

  公开（公告）日：2013-08-29

  A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

  一种形成图案的方法包括在基板上涂覆辐射敏感的树脂组合物以提供抗蚀膜。抗蚀膜被曝光。曝光的抗蚀膜被显影。用于显影曝光的抗蚀膜的显影剂溶液包括不少于80%的有机溶剂。辐射敏感的树脂组合物包括第一聚合物和辐射敏感的酸发生剂。第一聚合物包括具有酸不稳定基团和脂环族基团的第一结构单元。脂环族基团能够通过酸的作用避免从分子链中解离。
• Negative resist composition and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2256552A1

  公开（公告）日：2010-12-01

  There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2); or a polymer obtained by subjecting the functional groups of the polymerizedly obtained polymer to a further chemical conversion; and wherein the repeating units derived from the monomers represented by the general formula (1) are included in the obtained polymer at a sum ratio of 50 mole% or more relative to a total amount of all repeating units constituting the obtained polymer. There can be provided a negative resist composition having an excellent resolution and an enhanced etching resistance in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a patterning process using the same.

  本发明公开了一种抗蚀剂组合物，该组合物包括(A)可溶于碱且在酸的作用下在碱中不溶解的碱基聚合物；和/或交联剂与可溶于碱且在酸的作用下与交联剂反应从而在碱中不溶解的碱基聚合物的组合，(B)酸发生剂，和(C)作为碱性组分的含氮化合物；其中用作碱基聚合物的聚合物是：(A)可溶于碱且在酸的作用下在碱中不溶解的碱基聚合物，(B)酸发生剂，和(C)作为碱性组分的含氮化合物：通过聚合两种或两种以上由以下通式（1）表示的单体而得到的聚合物，或通过聚合含有一种或多种由以下通式（1）表示的单体和一种或多种由以下通式（2）表示的苯乙烯单体的单体混合物而得到的聚合物；或将聚合得到的聚合物的官能团进行进一步化学转化而得到的聚合物；以及 其中，由通式（1）代表的单体衍生的重复单元以相对于构成所得到的聚合物的所有重复单元总量 50 摩尔％或更高的总和比率包含在所得到的聚合物中。本发明可提供一种在用于精细加工的光刻技术中，特别是在采用 KrF 激光、极紫外线、电子束、X 射线或类似光源作为曝光源的光刻技术中，具有优异的分辨率和增强的抗蚀刻性的负型抗蚀剂组合物；以及使用该组合物的图案化工艺。