Methylphosphonium Tin Bromide: A 3D Perovskite Molecular Ferroelectric Semiconductor
作者:Han‐Yue Zhang、Xiao‐Gang Chen、Zhi‐Xu Zhang、Xian‐Jiang Song、Tie Zhang、Qiang Pan、Yi Zhang、Ren‐Gen Xiong
DOI:10.1002/adma.202005213
日期:2020.11
employed to successfully obtain a lead‐free 3D ABX3 OIHP ferroelectric semiconductor MPSnBr3, which shows clear above‐room‐temperature ferroelectricity and a direct bandgap of 2.62 eV. It is emphasized that MPSnBr3 is a multiaxial molecular ferroelectric with the number of ferroelectric polar axes being as many as 12, which is far more than those of the other OIHP ferroelectric semiconductors and even the
3D ABX 3的有机-无机钙钛矿卤化物(OIHP)半导体,如[CH 3 NH 3 ]碘化铅3已经由于它们对广泛应用的各种性能的得到高度重视。但是,尽管已经记录了许多基于铅的低维OIHP铁电半导体,但是获得3D ABX 3 OIHP铁电半导体却具有挑战性。本文中,使用A位阳离子[CH 3 PH 3 ] +(甲基phosph ,MP)成功获得了无铅3D ABX 3 OIHP铁电半导体MPSnBr 3,它显示出明显的高于室温的铁电性,并且直接带隙为2.62 eV。需要强调的是,MPSnBr 3是一种多轴分子铁电体,铁电极轴数多达12,远超过其他OIHP铁电半导体甚至是经典的无机钙钛矿铁电半导体BiFeO 3(4个极轴)。 )和BaTiO 3(3个极轴)。MPSnBr 3是第一个基于MP的3D ABX 3 OIHP铁电半导体。这一发现为其他具有广阔应用前景的出色3D ABX 3 OIHP铁电半导体的探索提供了线索。