申请人:——
公开号:US20030176583A1
公开(公告)日:2003-09-18
The present invention relates to polycyclic polymers, methods for producing polycyclic polymers, and methods for their use as photoresists in the manufacture of integrated circuits. In one embodiment, the present invention relates to photoresist compositions formed from the polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer. In another embodiment, the present invention relates to photoresist compositions formed from the co-polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer with at least one non-halogenated polycyclic monomer.
Additionally, the present invention relates to methods by which to post-treat such photoresist compositions in order to obtain one or more of: (1) a reduction in optical density of the polymer composition; and (2) a reduction in the amount of residual metal and/or monomer in the polymer composition. Also disclosed are catalyst systems for use in producing the photoresist compositions of the present invention which permit molecular weight control of the photoresist products.
本发明涉及多环聚合物、生产多环聚合物的方法以及将其用作集成电路制造中的光刻胶的方法。在一个实施方案中,本发明涉及由至少一种卤代多环单体或氢卤代多环单体聚合而成的光刻胶组合物。在另一个实施方案中,本发明涉及由至少一种卤代多环单体或卤代多环单体与至少一种非卤代多环单体共聚合形成的光阻组合物。
此外,本发明还涉及对此类光致抗蚀剂组合物进行后处理的方法,以获得以下一种或多种效果:(1) 降低聚合物组合物的光密度;(2) 降低聚合物组合物中残余金属和/或单体的含量。本发明还公开了用于生产本发明光刻胶组合物的催化剂体系,该体系可控制光刻胶产品的分子量。