Hydroalumination and Hydrogallation Reactions with Tri(ethynyl)silanes - Generation of Compounds with up to Three Coordinatively Unsaturated Aluminium Atoms
作者:Werner Uhl、Jörg Bohnemann、Denis Heller、Alexander Hepp、Marcus Layh
DOI:10.1002/zaac.201100418
日期:2012.1
h]2 (4a, E = Al, 4b, E = Ga) and (Me)Si[(tBu2Al)C=C(H)Ar]3 (5, Ar = Ph; 6, Ar = C6H4Me). Compounds 2–4 show a relatively close interaction between the coordinatively unsaturated aluminium or gallium atoms and one of the Cα(≡C) atoms of unreacted alkyne substituents [245 (E = Al) and 266 pm (E = Ga)] that stabilises the kinetically favoured cis addition products with E and hydrogen on the same side
三(乙炔基)硅烷的氢铝化或水镓化,RSi(C≡C-Ar)3(1a,R = Ph,Ar = Ph;1b,R = Me,Ar = Ph;1c,R = Me,Ar = C6H4Me) , 与元素氢化物 H-EtBu2 (E = Al, Ga) 在环境温度下以 1:1 到 1:3 的化学计量比产生加成产物 (PhC≡C)2(R)Si[(tBu2E)C=C (H)Ph] (2, R = Ph, E = Ga; 3a, R = Me, E = Al; 3b, R = Me, E = Ga), (PhC≡C)(Me)Si[(tBu2E) C=C(H)Ph]2 (4a, E = Al, 4b, E = Ga) 和 (Me)Si[(tBu2Al)C=C(H)Ar]3 (5, Ar = Ph; 6, Ar = C6H4Me)。化合物 2-4 显示出配位不饱和铝或镓原子与未反应炔烃取代基的 Cα(≡C) 原子之一