N,N′-diisopropyl-N-(trimethylsilyl)acetimidamide | 587832-78-8

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: N,N′-diisopropyl-N-(trimethylsilyl)acetimidamide
• 英文别名: (1E)-N,N'-Di(propan-2-yl)-N-(trimethylsilyl)ethanimidamide；N,N'-di(propan-2-yl)-N-trimethylsilylethanimidamide
• CAS: 587832-78-8
• 化学式: C₁₁H₂₆N₂Si
• 分子量: 214.426
• InChiKey: VFSJHULYZJOKOW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.36
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.91
• 拓扑面积：
  15.6
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  indium(III) chloride 、 N,N′-diisopropyl-N-(trimethylsilyl)acetimidamide 反应 12.0h， 以83%的产率得到[(iPr)NC(Me)N(iPr)]in(III)Cl₂
  参考文献：
  名称：

  INDIUM PRECURSORS FOR VAPOR DEPOSITIONS

  摘要：

  Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 μ-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

  公开号：

  US20220106333A1

文献信息

• INDIUM PRECURSORS FOR VAPOR DEPOSITIONS
  申请人：American Air Liquide, Inc.

  公开号：US20220106333A1

  公开（公告）日：2022-04-07

  Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 μ-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.