(triethylgermyl)bis(trimethylsilyl)amine | 1357556-77-4

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: (triethylgermyl)bis(trimethylsilyl)amine
• 英文别名: N-triethylgermyl-N,N-bis(trimethylsilyl)amine；[[bis(trimethylsilyl)amino]-diethylgermyl]ethane
• CAS: 1357556-77-4
• 化学式: C₁₂H₃₃GeNSi₂
• 分子量: 320.162
• InChiKey: VFGOREQZIXNCSA-UHFFFAOYSA-N

物化性质

• 沸点：
  269.9±23.0 °C(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.96
• 重原子数：
  16
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  3.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  乙酰碘 、 (triethylgermyl)bis(trimethylsilyl)amine 反应 5.0h， 以2.2 g的产率得到N,N-二(三甲基硅基)乙酰胺
  参考文献：
  名称：

  有机合成中的酰基碘。与取代的双（三甲基甲硅烷基）胺的反应

  摘要：

  DOI：

  10.1134/s1070428013010259
• 作为产物：
  描述：

  三乙基溴化锗 、 六甲基二硅氮烷 在 Na 、 styrene 作用下， 以 甲苯 为溶剂， 以77%的产率得到(triethylgermyl)bis(trimethylsilyl)amine
  参考文献：
  名称：

  N-substituted hexamethyldisilazanes as new substances for the synthesis of functional films in the system Si-Ge-C-N-H

  摘要：

  N-Organylbis(trimethylsilyl)amines of the general formula RN(SiMe3)(2) (R = Me3Si, Et3Ge) were synthesized by reaction of sodium bis(trimethylsilyl)amide with the corresponding trialkylsilyl(germyl) halide. Their IR, UV, and H-1, C-13, and Si-29 NMR spectra were studied, and saturated vapor pressures and thermal stabilities were determined. The possibility of using the RN(SiMe3)(2) compounds as precursors in chemical vapor deposition of films with specified composition was estimated by thermodynamic modeling.

  DOI：

  10.1134/s1070363211120140

文献信息

• Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2: New precursors for chemical vapor deposition processes
  作者：S. V. Sysoev、L. D. Nikulina、E. N. Ermakova、M. L. Kosinova、V. I. Rakhlin、I. P. Tsyrendorzhieva、A. V. Lis、M. G. Voronkov

  DOI：10.1134/s0020168513040171

  日期：2013.4

  We have synthesized the germanium- and tin-containing organosilicon compounds Et3GeN(SiMe3)(2) and Et3SnN(SiMe3)(2) as new precursors for the preparation of materials by chemical vapor deposition. The compounds were characterized by NMR, IR and UV spectroscopies and thermal analysis. Using vapor pressure measurements, we obtained temperature dependences of their saturated vapor pressure. We assessed their thermal stability and calculated the thermodynamic characteristics of vaporization of the organosilicon compounds.