Physicochemical processes involved in synthesis of thin films based on double oxides of the ZrO2-GeO2 system
摘要:
The major physicochemical processes underlying the preparation of thin films of the ZrO-GeO2 system from film-forming solutions based on zirconium oxochloride (ZrOCl2 center dot 8H(2)O), germanium tetrachloride (GeCl4), and ethanol were studied. The phase composition, structure, and physicochemical properties of the films were determined.