is the favorable energy of the CO π* orbitals, which are suitably positioned to overlap with tungsten d orbitals and exert an oxidizing effect on both metal and dithiolene ligand via π-backbonding. The CN– π* orbitals are too high in energy to mix effectively with tungsten and thus leave the filled dithiolene π* orbitals unperturbed. This work shows how, and the degree to which, the redox level of a
[W(S 2 C 2 Me 2)2 L 1 L 2 ] n类型的一组扩展化合物(n = 0:L 1 = L 2 = CO,1 ; L 1 = L 2 = CN t Bu,2,L 1 = CO,L 2 =卡宾,3,L 1 = CO,L 2 =膦,4,L 1 = L 2 =膦,5。ñ = 2-:L1 = L 2 = CN –,[ 6 ] 2–)已经合成并表征。尽管采用了等电子形式,该化合物组仍显示出二
硫代烯
配体氧化还原
水平的级配,如配位体内键长υCCchelate和
硫K边缘X射线吸收光谱(XAS)中的上升沿能量所示。终端机系列成员1和[ 6 ] 2–之间的差异与通过与基于二
硫辛烯的MO的全电子转移相关的均一的二
硫辛烯络合物中观察到的差异相当。控制这些差异的关键特征是COπ*轨道的有利能量,该轨道的位置适合与
钨d轨道重叠,并通过π回键对
金属和二
硫代烯烃
配体产生氧化作用。CN - π*轨道的能量太