1,3-bis(2-carboxyethyl)5-methylisocyanurate | 2452-22-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 三嗪类
• 英文名称: 1,3-bis(2-carboxyethyl)5-methylisocyanurate
• 英文别名: 3,3'-(5-methyl-2,4,6-trioxo-[1,3,5]triazinane-1,3-diyl)-bis-propionic acid；3-[3-(2-Carboxyethyl)-5-methyl-2,4,6-trioxo-1,3,5-triazinan-1-yl]propanoic acid
• CAS: 2452-22-4
• 化学式: C₁₀H₁₃N₃O₇
• 分子量: 287.229
• InChiKey: IBHZWPCOUCJDEF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.6
• 重原子数：
  20
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  136
• 氢给体数：
  2
• 氢受体数：
  7

文献信息

• Polymer for organic bottom anti-reflective coating and bottom anti-reflective coatings comprising the same
  申请人：SK Innovation Co., Ltd.

  公开号：US11435667B2

  公开（公告）日：2022-09-06

  Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.

  本发明提供了一种用于有机底部防反射涂层的聚合物和一种含有该聚合物的底部防反射涂层组合物。更具体地说，本发明提供了一种用于有机底部防反射涂层的聚合物，该聚合物能够缓解在制造半导体器件的光刻工艺中涂敷在基底上的光刻胶层的曝光光和照射光在基底上的反射，还提供了一种含有该聚合物的底部防反射涂层组合物。
• ANTIREFLECTIVE COATING COMPOSITIONS
  申请人：AZ Electronic Materials USA Corp.

  公开号：EP2300518B1

  公开（公告）日：2012-08-15
• Antireflective Coating Compositions
  申请人：Yao Huirong

  公开号：US20100009297A1

  公开（公告）日：2010-01-14

  Antireflective coatings and related polymers are disclosed.
• Polymer for Organic Bottom Anti-Reflective Coating and Bottom Anti-Reflective Coating Composition Containing the Same
  申请人：SK Innovation Co., Ltd.

  公开号：US20200264509A1

  公开（公告）日：2020-08-20

  Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.
• US8221965B2
  申请人：——

  公开号：US8221965B2

  公开（公告）日：2012-07-17