2,2-di-[1]naphthyl-1,2-diphenyl-ethanone | 121261-01-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 三苯基化合物
• 英文名称: 2,2-di-[1]naphthyl-1,2-diphenyl-ethanone
• 英文别名: 2,2-Di-[1]naphthyl-1,2-diphenyl-aethanon；1.1-Diphenyl-1.1-di-α-naphthyl-aethanon；β-Oxo-α.β-diphenyl-α.α-(dinaphthyl-(1))-aethan；ms.ms-Di-α-naphthyl-desoxybenzoin；Phenyl-di-α-naphthyl-benzoyl-methan
• CAS: 121261-01-6
• 化学式: C₃₄H₂₄O
• 分子量: 448.564
• InChiKey: XZHXAYWAGSPFBW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.21
• 重原子数：
  35.0
• 可旋转键数：
  5.0
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.03
• 拓扑面积：
  17.07
• 氢给体数：
  0.0
• 氢受体数：
  1.0

反应信息

• 作为反应物：
  描述：

  2,2-di-[1]naphthyl-1,2-diphenyl-ethanone 在 potassium carbonate 作用下， 生成 羟基-苯基-二-(萘基-(1))-甲烷
  参考文献：
  名称：

  Elbs, Journal fur praktische Chemie (Leipzig 1954), 1887, vol. <2> 35, p. 506

  摘要：

  DOI：
• 作为产物：
  描述：

  1,2-二-[1]萘基-1,2-二苯基-乙烷-1,2-二醇 在 氯磺酰异氰酸酯 作用下， 以 二氯甲烷 为溶剂， 以97%的产率得到2,2-di-[1]naphthyl-1,2-diphenyl-ethanone
  参考文献：
  名称：

  Joseph, Sajan P.; Dhar, D. N., Synthetic Communications, 1988, vol. 18, # 18, p. 2295 - 2302

  摘要：

  DOI：

文献信息

• Elbs; Brand, Zeitschrift fur Elektrochemie und angewandte physikalische Chemie, 1902, vol. 8, p. 784,786
  作者：Elbs、Brand

  DOI：——

  日期：——
• Current mechanisms in VLWIR Hg1−xCdxTe photodiodes
  作者：A. I. D'Souza、R. E. Dewames、P. S. Wijewarnasuriya、G. Hildebrandt、J. M. Arias

  DOI：10.1007/bf02665838

  日期：2001.6

  VLWIR (lambda (c) similar to 15 mum to 17 ym at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. I-d - V-d curves indicate that VLWIR detectors are diffusion limited in reverse and near zero bias voltages down to temperatures in the 40 K range. At 30 K the detectors are limited by tunneling currents in reverse bias. Since the detectors are diffusion limited near zero bias down to 40 K, the R(o)A(imp) versus temperature data represents the diffusion current performance of the detector as a function of temperature. The detector spectral response measurement and active layer thickness are utilized to calculate the HgCdTe layer x value and the optical activation energy E-a optical. The activation energy, E-a electrical, Obtained from the measured diffusion limited R(o)A(imp) versus temperature data is not equal to the activation energy, E-a optical, obtained from the spectral response measurement for all x values measured. E-a electrical = beta* E-a optical, where beta ranges between 0.64 and 1.0 For cutoff wavelengths in the less than or equal to 9 mum at 78 K, E-a electrical = E-a optical. E-a electrical = 0.65* E-a optical have been measured for lambda (c) = 17 mum at 78 K detectors. As the band gap energy decreases to values in the range of 70 meV and lower, it is reasonable to expect a more dominant role of band tailing effects on the transport properties of the material system. In such a picture, one would expect the optical band gap to be unmodified, whereas the intrinsic concentration could be enhanced from its value for the ideal semiconductor. Such a picture could explain the observed behavior. Further probing experiments and modeling efforts will help clarify the physics of this behavior.
• Elbs; Steinike, Chemische Berichte, 1886, vol. 19, p. 1965
  作者：Elbs、Steinike

  DOI：——

  日期：——
• Elbs; Steinicke, Journal fur praktische Chemie (Leipzig 1954), 1887, vol. <2> 35, p. 504
  作者：Elbs、Steinicke

  DOI：——

  日期：——