摘要:
A series of organoindium amido compounds have been prepared for use as dopants in the organometallic vapor phase epitaxy (OMVPE) of II-VI semiconductor materials. Thus, reaction of tBu2InCl or iPr2InCl with the appropriate lithium or sodium dialkyiamide afforded compounds of the type R2InNR2' (where R = (t)Bu, (i)Pr, and R' = Me, (i)Pr, SiMe3). Similarly, reaction of the N-lithiated derivative of NCMe2(CH2)3CMe2 gave iPr2InNCMe2(CH)3CMe2. All of the compounds are monomeric liquids, except for the compound where R = (t)Bu, R' = Me, which is a dimeric solid. The compounds have been characterized by H-1 and C-13 NMR, IR, molecular weight determination, and elemental analysis. In addition, properties relevant to the OMVPE process such as volatility and photosensitivity are presented and evaluated.