varying the substituent pattern on the peripheral R3Ge- groups on the electronic properties of these oligogermanes were investigated using cyclic and differential pulse voltammetry (CV and DPV), UV/visible spectroscopy, and 73Ge NMR spectroscopy. The CV, DPV, and 73Ge NMR data were compared to several previously reported branched oligogermanes, including (Bun3Ge)3GePh, (Ph3Ge)3GePh, (Ph3Ge)3GeH, and (Me3Ge)4Ge
三个支oligogermanes(ME 3 Ge)的3 GePh,(ME 2卜吨Ge)的3 GePh,和(ME 2 PhGe)3 GePh分别经由hydrogermolysis反应合成并通过NMR表征(1 H,13 C,和73 Ge)光谱学。此外,使用高分辨率精确质谱(HR
AM-MS)对这三种化合物和(Bu n 3 Ge)3 GePh进行了分析,这是首次对分支低聚物进行HR
AM-MS研究。改变取代基图案对外围R 3的影响使用循环和差分脉冲伏安法(CV和DPV),紫外/可见光谱和73 Ge NMR光谱研究了这些低聚
锗烷的电子性质上的Ge-基团。将CV,DPV和73 Ge NMR数据与几个先前报道的支链低聚物进行了比较,包括(Bu n 3 Ge)3 GePh,(Ph 3 Ge)3 GePh,(Ph 3 Ge)3 GeH和(Me 3 Ge )4个。