the analogous reaction with AsCl3 occurred with twofold insertion and subsequent elimination of LGaCl2 and formation of the Ga‐substituted diarsene [L(Cl)Ga]2As2 (3). Analogous findings were observed in the reactions with Me2NAsCl2, yielding the unsymmetrically‐substituted diarsene [L(Cl)Ga]As=As[Ga(NMe2)L] (4). The reaction of As(NMe2)3 with LGa gave [L(Me2N)Ga]2As2 (5) after heating at 165 °C for
两当量的LGa(L = HC [C(Me)N(2,6 - i Pr 2 C 6 H 3)] 2)与PX 3(X = Cl,Br)反应并插入两个PX键和[L(X)Ga] 2 PX(X = Cl 1,Br 2)的形成,而与AsCl 3的类似反应发生两次插入并随后消除LGaCl 2并形成Ga取代的二砷[L(Cl [] Ga] 2 As 2(3)。在与Me 2 NAsCl 2的反应中观察到类似的发现,得到不对称取代的二砷[L(Cl)Ga] As = As [Ga(NMe 2)L](4)。As(NMe 2)3与LGa的反应在165°C下加热五天后得到[L(Me 2 N)Ga] 2 As 2(5),而与
LAI的反应得到[L(Me 2 N) Al] 2 As 2(6)仅在80°C加热一天后。最后,两个当量的LGa与Bi(NEt 2)3反应,得到[L(Et 2 N)Ga] 2 Bi 2(7)。复合体1 –