申请人:SAMSUNG ELECTRONICS CO., LTD.
公开号:US20220078907A1
公开(公告)日:2022-03-10
An insulation structure includes: a first resin layer including first fillers; a second resin layer on the first resin layer and including second fillers; and a third resin layer on the second resin layer and including third fillers. A diameter of each of the first fillers may be more than about 200 nm and equal to or less than about 500 nm. A diameter of each of the second fillers may be more than about 10 nm and equal to or less than about 200 nm. A diameter of each of the third fillers may be equal to or less than about 10 nm. An arithmetic average roughness (Ra) and a ten point average roughness (Rz) of a surface of the insulation structure may be equal to or less than about 30 nm and equal to or less than about 100 nm, respectively.