4-[1-[4-Hydroxy-3,5-bis(methoxymethyl)phenyl]-1-[4-[2-[4-hydroxy-3,5-bis(methoxymethyl)phenyl]propan-2-yl]phenyl]ethyl]-2-(2-hydroxyethyl)-6-(methoxymethyl)phenol

• 分子结构分类: 有机化合物 - 苯类化合物 - 三苯基化合物
• 英文名称: 4-[1-[4-Hydroxy-3,5-bis(methoxymethyl)phenyl]-1-[4-[2-[4-hydroxy-3,5-bis(methoxymethyl)phenyl]propan-2-yl]phenyl]ethyl]-2-(2-hydroxyethyl)-6-(methoxymethyl)phenol
• 英文别名: 4-[1-[4-hydroxy-3,5-bis(methoxymethyl)phenyl]-1-[4-[2-[4-hydroxy-3,5-bis(methoxymethyl)phenyl]propan-2-yl]phenyl]ethyl]-2-(2-hydroxyethyl)-6-(methoxymethyl)phenol
• 化学式: C₄₁H₅₂O₉
• 分子量: 688.8
• InChiKey: QJDJSQPRBNEORD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.4
• 重原子数：
  50
• 可旋转键数：
  17
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.41
• 拓扑面积：
  127
• 氢给体数：
  4
• 氢受体数：
  9

文献信息

• NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
  申请人：FUJIFILM Corporation

  公开号：US20140227642A1

  公开（公告）日：2014-08-14

  A negative resist composition, includes: (A) an alkali-soluble polymer containing a specific repeating unit as defined in the specification; (B) a crosslinking agent capable of crosslinking with the alkali soluble polymer (A) under an action of an acid; (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (D) a specific quaternary ammonium salt as defined in the specification; and (E) an organic carboxylic acid, and a pattern forming method uses the composition.
• US9034560B2
  申请人：——

  公开号：US9034560B2

  公开（公告）日：2015-05-19