COMPOSITION FOR FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PATTERN-FORMING METHOD AND COMPOUND
申请人:JSR CORPORATION
公开号:US20160085152A1
公开(公告)日:2016-03-24
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R
1
, R
2
and R
3
each independently represent a group represented by the formula (a). In the formula (a), R
A
represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. R
B
represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.