4,6-Di-morpholin-4-yl-[1,3,5]triazine-2-carboxylic acid | 626223-48-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 三嗪类
• 英文名称: 4,6-Di-morpholin-4-yl-[1,3,5]triazine-2-carboxylic acid
• 英文别名: 4,6-dimorpholin-4-yl-1,3,5-triazine-2-carboxylic acid
• CAS: 626223-48-1
• 化学式: C₁₂H₁₇N₅O₄
• 分子量: 295.29
• InChiKey: SLQFUXWZUXEQSX-UHFFFAOYSA-N

物化性质

• 沸点：
  587.8±60.0 °C(Predicted)
• 密度：
  1.417±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  101
• 氢给体数：
  1
• 氢受体数：
  9

安全信息

• 危险等级：
  IRRITANT

文献信息

• CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2985783A1

  公开（公告）日：2016-02-17

  It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.

  本发明的目的是提供一种用于具有金属配线的基板的清洗剂，以及一种半导体基板的清洗方法，包括在半导体器件制造工艺中化学机械抛光（CMP）后的清洗工序中使用该清洗剂，从而获得以下效果（1）至（5）。(1) 可以充分去除 CMP 工序中使用的细颗粒（抛光剂）残留物、抛光金属产生的细颗粒（金属颗粒）、防腐剂等。(2) 可以充分去除（剥离）金属布线表面的涂膜（保护膜：抗氧化膜），该涂膜含有在 CMP 工艺中形成的防腐剂（如苯并三唑或喹啉二酸）与金属布线表面金属之间的络合物。(3) 在去除（剥离）涂膜后，可形成含有金属氧化物的氧化膜。(4) 即使在 CMP 后的清洗工序后离开基板，也能长期稳定地获得半导体基板，而不会影响金属布线表面（含有金属氧化物的氧化膜表面）的平整度。(5) 即使长期使用该清洗剂也不易变质。 本发明涉及一种用于具有金属配线的衬底的清洗剂，包括含有(A)具有含氮杂环的羧酸和(B)烷基羟胺且 pH 值为 10 或更高的水溶液，以及一种半导体衬底的清洗方法，其中包括使用该清洗剂。