N-[2-(dimethylaminosulfanyl)ethylsulfanyl]-N-methylmethanamine | 24128-04-9

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机次磺酸及其衍生物
• 英文名称: N-[2-(dimethylaminosulfanyl)ethylsulfanyl]-N-methylmethanamine
• CAS: 24128-04-9
• 化学式: C₆H₁₆N₂S₂
• 分子量: 180.338
• InChiKey: ASPCJDHCVOCKAD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.2
• 重原子数：
  10
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  57.1
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  1,2-bis(chlorosulfanyl)ethane 、 二甲胺 以 乙醚 为溶剂， 生成 N-[2-(dimethylaminosulfanyl)ethylsulfanyl]-N-methylmethanamine
  参考文献：
  名称：

  Mueller,W.H.; Dines,M., Journal of Heterocyclic Chemistry, 1969, vol. 6, p. 627 - 630

  摘要：

  DOI：

文献信息

• Organoaminosilanes and methods for making same
  申请人：Versum Materials US, LLC

  公开号：US10294250B2

  公开（公告）日：2019-05-21

  Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.

  有机氨基硅烷，例如但不限于二异丙氨基硅烷（DIPAS），是沉积氧化硅和氮化硅薄膜等含硅薄膜的前体。本文描述了通过包含氢基硅烷的硅源对亚胺进行催化氢硅烷化来制造有机氨基硅烷化合物或其他化合物如有机氨基二硅烷和有机氨基碳硅烷的方法。
• Organoaminosilane precursors and methods for depositing films comprising same
  申请人：VERSUM MATERIALS US, LLC

  公开号：US10453675B2

  公开（公告）日：2019-10-22

  Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

  本文描述了用于形成含硅薄膜的前体和方法。在一个方面，前驱体包括由下式 A 至 E 之一代表的化合物： 在一个特定的实施方案中，有机氨基硅烷前体对含硅薄膜的低温（如 350° C 或更低）、原子层沉积（ALD）或等离子体增强原子层沉积（PEALD）有效。此外，本文还描述了一种包含本文所述有机氨基硅烷的组合物，其中有机氨基硅烷基本上不含至少一种选自胺、卤化物（如Cl、F、I、Br）、高分子量物种和痕量金属的物质。
• Organoaminosilanes and Methods for Making Same
  申请人：Versum Materials US, LLC

  公开号：US20170204120A1

  公开（公告）日：2017-07-20

  Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.
• Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
  申请人：Versum Materials US, LLC

  公开号：US20170207084A1

  公开（公告）日：2017-07-20

  Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350 ° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
• Organoaminosilane Precursors And Methods For Depositing Films Comprising Same
  申请人：Versum Materials US, LLC

  公开号：US20200051811A1

  公开（公告）日：2020-02-13

  Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.