isotetrasilane | 13597-87-0

• 英文名称: isotetrasilane
• 英文别名: Trisilylsilane
• CAS: 13597-87-0
• 化学式: H₁₀Si₄
• 分子量: 122.421
• InChiKey: KLXUSFHSWONPAC-UHFFFAOYSA-N

物化性质

• 熔点：
  -99°C
• 沸点：
  101°C
• 溶解度：
  与H2O反应

计算性质

• 辛醇/水分配系数(LogP)：
  -4.2
• 重原子数：
  4
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  tin tetradeuteride 、 正四硅烷 、 iso-tetragermane 、 isotetrasilane 在 锗烷 、 氢气 作用下， 以 neat (no solvent) 为溶剂， 300.0 ℃ 、0.01 Pa 条件下， 生成
  参考文献：
  名称：

  Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn

  摘要：

  This Article describes the development of an optimized chemistry-based synthesis method, supported by a purpose-built reactor technology, to produce the next generation of Ge1-X-ySixSny materials on conventional Si(100) and Ge(100) platforms at gas-source molecular epitaxy conditions. Technologically relevant alloy compositions (1-5% Sn, 4-20% Si) are grown at ultralow temperatures (330-290 degrees C) using highly reactive tetragermane (Ge4H10), tetrasilane (Si4H10), and stannane (SnD4) hydride precursors, allowing the simultaneous increase of Si and Sn content (at a fixed Si/Sn ratio near 4) for the purpose of tuning the bandgap while maintaining lattice-matching to Ge. First principles thermochemistry studies were used to explain stability and reactivity differences between the Si/Ge hydride sources in terms of a complex interplay among the isomeric species, and provide guidance for optimizing process conditions. Collectively, this approach leads to unprecedented control over the substitutional incorporation of Sn into Si Ge and yields materials with superior quality suitable for transitioning to the device arena. We demonstrate that both intrinsic and doped Ge1-x-ySixSny layers can now be routinely produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors on Ge(100). Highlights of these new devices include precisely adjustable absorption edges between 0.87 and 1.03 eV, low ideality factors close to unity, and state-of-the-art dark current densities for Ge-based materials. Our unequivocal realization of the "molecules to device" concept implies that GeSiSn alloys represent technologically viable semiconductors that now merit inclusion in the class of ubiquitous Si, Ge, and SiGe group IV systems.

  DOI：

  10.1021/ja309894c
• 作为产物：
  描述：

  i-Si4Cl10 在 二异丁基氢化铝 作用下， 反应 9.0h， 生成 isotetrasilane
  参考文献：
  名称：

  液体发火氢化硅烷的合成和分子结构。

  摘要：

  丙硅烷、异四硅烷、新戊硅烷和环己硅烷已以克级制备。这些自燃液体在衍射仪上的密封毛细管中进行原位冷冻结晶，可以了解这些化合物的单晶结构。讨论了结构参数，并将其与文献中的气相电子衍射结构以及量子化学计算的结果进行了比较。与相应的烷烃相比，硅烷的堆积指数明显更高。紫外光（365 nm）辐射和平行ESR（EPR）测量表明，环己硅烷很容易分裂成自由基，从而导致支化和链状低聚物的形成。其他化合物在这些条件下不形成自由基。所有四种化合物的核磁共振谱均已记录。

  DOI：

  10.1002/open.202000152

文献信息

• Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon
  作者：Barry Arkles、Youlin Pan、Fernando Jove、Jonathan Goff、Alain Kaloyeros

  DOI：10.1021/acs.inorgchem.8b02761

  日期：2019.3.4

  higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. The chemical characteristics, thermodynamic properties, and epitaxial film growth of isotetrasilane are compared with those of other perhydridosilanes. A film-growth mechanism distinct from linear perhydridosilanes H(SiH2)nH, where

  提出了一种合成方法，用于生产异丁硅烷（一种更高阶的全氢硅烷），其纯度和体积对于外延硅（e-Si）薄膜的化学气相沉积（CVD）的广泛研究必不可少。将异四硅烷的化学特性，热力学特性和外延膜生长与其他全氢硅烷进行了比较。不同于线性全氢硅烷H（SiH 2）n H的膜生长机理，其中n≤4，据报道。总结了在500–550°C的温度下使用异丁硅烷作为源前驱体的未应变e-Si和掺有锗（Ge）和碳（C）的应变e-Si的CVD的初步发现。结果表明，在未观察到气相耗尽反应的处理条件下，双（三氢甲硅烷基）亚甲硅烷基是可能的沉积中间体。
• Unusually selective synthesis of chlorohydrooligosilanes
  作者：Thomas Lainer、Roland Fischer、Mario Leypold、Michael Holthausen、Odo Wunnicke、Michael Haas、Harald Stueger

  DOI：10.1039/d0cc06506d

  日期：——

  New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes with substoichiometric amounts of iBu2AlH. The unexpected selective formation of Cl3Si-substituted species in the partial hydrogenation reactions

  通往分子式氯氢低聚硅烷的新途径，可以通过用HCl / AlCl 3选择性氯化相应的过氢硅烷，或通过用亚化学计量的iBu 2 AlH对全氯代低聚硅烷进行部分加氢，以制备量进行一锅合成。在部分氢化反应中意外地选择性形成Cl 3 Si-取代的物质可能与机理有关。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: F: SVol.3, 2.1.13.8.5, page 296 - 298
  作者：

  DOI：——

  日期：——
• Lobreyer, Thomas; Sundermeyer, Wolfgang; Oberhammer, Heinz, Chemische Berichte, 1994, vol. 127, # 11, p. 2111 - 2116
  作者：Lobreyer, Thomas、Sundermeyer, Wolfgang、Oberhammer, Heinz

  DOI：——

  日期：——
• Silicon-Fluorine Chemistry. I. Silicon Difluoride and the Perfluorosilanes¹
  作者：Peter L. Timms、Richard A. Kent、Thomas C. Ehlert、John L. Margrave

  DOI：10.1021/ja01091a009

  日期：1965.7