Silicondifluoride reacts with CF3I to give mainly CF3SiF2I. Other products are CF3SiF2SiF2I, SiF3SiF2I, SiF3SiF2SiF2I, SiF2ISiF2I and SiF2ISiF2SiF2I. The mass spectra and NMR spectra of these compounds are described and also the i.r. spectrum of CF3SiF2I is reported. A reaction mechanism which accounts for these products is proposed.
Reaction of silicon difluoride with halogens: a reinvestigation
作者:Bettadapura S. Suresh、James Charlton Thompson
DOI:10.1039/dt9870001123
日期:——
Reactions of SiF2 with halogens have been reinvestigated by both co-condensation and gas-phase methods. The co-condensation method yields a number of fluorohalogenosilanes including mono-, di-, and higher silane derivatives. These compounds contain SiF, SiF2, and SiF3 units. The reactivity towards SiF2 decreases from chlorine through bromine to iodine. While chlorine and bromine give rise to a number
(F3SiS)2SiF2. Diese Fluorsilylsulfane haben eine bemerkenswert unterschiedliche thermische Stabilitat. Wahrend sich (F3SiS)2SiF2 bereits bei Raumtemperatur zersetzt, ist das bei dieser Temperatur stabile (F3Si)2S eine vielseitige Ausgangsverbindung zur Synthesevon F3Si-Derivaten. Das Silylsulfan F3SiSH konnte neben F3SiBr durch selektive Spaltung einer SiS-Bindung von flussigem (F3Si)2S mit HBr in reiner
Kinetics and mechanism of the gas-phase pyrolysis of hexafluorodisilane in the presence of iodine and some reactions of silicon difluoride
作者:Swroop K. Bains、Paul N. Noble、Robin Walsh
DOI:10.1039/f29868200837
日期:——
gas-phase thermal decomposition of Si2F6 in the presence of I2 has been found to follow first-order kinetics with the formation of SiF4, SiF2I2 and SiF3I. The reactions appear to be homogeneous and consistent with the mechanism: Si2F6→ SiF2+ SiF4(slow)(1), SiF2+ I2→ SiF2I2(fast).(2) SiF3I is a minor product and its mechanism of formation is uncertain. Rate measurements over the temperature range 603–652
Si的气相热分解2 ˚F 6中的我的存在2已发现遵循一级动力学与的SiF的形成4,的SiF 2我2和SIF 3 I.反应似乎是均匀的,一致的其机理为:Si 2 F 6 →SiF 2 + SiF 4(慢)(1),SiF 2 + I 2 →SiF 2 I 2(快速)。(2)SiF 3我是次要产品,其形成机理尚不确定。在603–652 K温度范围内的速率测量符合Arrhenius方程:log(k 1 / s –1)=(12.41±0.24)–(193.5±2.9 kJ mol –1)/ R T ln 10。在630 K下,发现SiF 2与I 2的反应比与O 2的反应快3.6倍,比HI快17倍。SiF 2与I 2的反应也比与HBr或苯的反应至少快10 2倍,比SiF 4的反应快10 4倍以上。缺少I原子位移过程是一致d(F 3的Si-的SiF 3)337千焦耳摩尔-1,这导致值Δ ħ ⊖ ˚F(SI