In spite of large steric repulsion betweenaromaticquinone moiety and dicyanomethylene moiety the title compounds (BDCNBA) were synthesized by TiCl4-catalyzed reactions of the corresponding aromaticquinones and malononitrile. BDCNBA showed electronic spectra indicating the intramolecular charge-transferinteraction and redox properties similar to 11,11,12,12-tetracyano-9,10-anthraquinodimethane (TCNAQ)
Developing solution and method of forming polyimide pattern by using the developing solution
申请人:Yoshiaki Kawamonzen
公开号:US20010006767A1
公开(公告)日:2001-07-05
Disclosed is a developing solution for a photosensitive polyimide, which consists of an aqueous solution of an amine compound having a base dissociation index pKb [=−log (Kb)=−log (Kw/Ka)=14−pKa, where Kb is a base dissociation constant, Ka is acid dissociation constant of a proton complex, pKa is an acid dissociation index of a proton complex=−log (Ka), and Kw is an ion product of water=1×10
−14
] of 5 to 8 within an aqueous solution of 25° C.
Resin-encapsulated semiconductor apparatus and process for its fabrication
申请人:Hitachi, Ltd.
公开号:US20020027268A1
公开(公告)日:2002-03-07
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.