申请人:Taiwan Semiconductor Manufacturing Company, Ltd.
公开号:US11309190B2
公开(公告)日:2022-04-19
In a wet etching process to pattern a metal layer such as a p-metal work function layer over a dielectric layer such as a high-k gate dielectric layer, a selectivity of the wet etching solution between the metal layer and the dielectric layer is increased utilizing an inhibitor. The inhibitor includes such inhibitors as a phosphoric acid, a carboxylic acid, an amino acid, or a hydroxyl group.
在将金属层(如 p-金属工作函数层)图案化到介电层(如高 K 栅极介电层)上的湿蚀刻工艺中,利用抑制剂可提高湿蚀刻溶液在金属层和介电层之间的选择性。抑制剂包括磷酸、羧酸、氨基酸或羟基等抑制剂。