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silane-d3 | 13537-02-5

中文名称
——
中文别名
——
英文名称
silane-d3
英文别名
silane
silane-d3化学式
CAS
13537-02-5
化学式
H4Si
mdl
——
分子量
35.0934
InChiKey
BLRPTPMANUNPDV-FIBGUPNXSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -1.45
  • 重原子数:
    1.0
  • 可旋转键数:
    0.0
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    0.0
  • 氢给体数:
    0.0
  • 氢受体数:
    0.0

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    lithium aluminium deuteride 、 三氯硅烷 以 further solvent(s) 为溶剂, 生成 silane-d3
    参考文献:
    名称:
    INFRARED SPECTRA AND VIBRATION-ROTATION ANALYSES OF THE ν1AND ν5BANDS OF SILANE-d3
    摘要:
    通过傅立叶变换光谱仪测量了气态硅烷-d3的ν1和ν5波段的红外光谱。对ν1波段进行分析后,得到了28SiHD3的基态常数:B0=1.777388±0.000075 cm−1,(DJ)0=(1.5895±0.0090)×10−5 cm−1,以及(DJK)0=−(1.136±0.057)×10−5 cm−1。此外,还测定了v1=1和v5=1态的光谱常数。
    DOI:
    10.1246/cl.1982.27
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文献信息

  • H/D isotope exchange reaction of SiH<sup>+</sup><sub>3</sub> with SiD<sub>4</sub> and SiD<sup>+</sup><sub>3</sub> with SiH<sub>4</sub>: Evidence for hydride stripping reaction
    作者:W. D. Reents、M. L. Mandich
    DOI:10.1063/1.458860
    日期:1990.9
    We have measured the reaction rates and product distributions for SiHxD+3−x reactions with SiH4 and SiD4. The measured reaction rates for SiH+3 and SiD4 (26.1±1.0×10−10 cc/molecule s) and for SiD+3 and SiH4 (23.1±1.0×10−10 cc/molecule s) are greater than the calculated Langevin collision rate (12.3–12.4×10−10 cc/molecule s). Also, the product distribution observed for H/D exchange is nonstatistical. Dual, competing reaction mechanisms are invoked to account for these observations: reaction via formation of an ion-molecule complex and reaction via long-range hydride stripping. Using an expected product distribution calculated from reaction thermochemistries, the relative contributions of the two mechanisms is obtained for each reaction examined. The reaction rate for the ion-molecule complex mechanism is calculated to be at the Langevin collision rate within experimental error. The reaction rate for the stripping mechanism varies from 1–4×10−10 cc/molecule s (10–30% of the Langevin collision rate) for the mixed isotope ions SiH2D+ and SiHD+2 to 12–18×10−10 cc/molecule s (100%–150% of the Langevin collision rate) for the isotopically pure ions SiH+3 and SiD+3. The faster than Langevin reaction rates lower the expected low field mobility of SiH+3 in silane plasmas by 70% to ∼340 cm2 Torr/V s.
  • Rotational structure of ΔνSi-H=7 and 8 overtone transitions of SiHD3
    作者:A. Campargue、M. Chenevier、F. Stoeckel
    DOI:10.1016/0301-0104(89)87109-5
    日期:1989.10
  • Ground state rotational and K = 3 splitting parameters determined from high resolution infrared spectra: H28SiD3, H70GeD3 and H120SnD3
    作者:Hans Bürger、Helmut Ruland、Luciano Fusina
    DOI:10.1016/s0009-2614(97)00192-9
    日期:1997.4
    High-resolution (ca. 0.003 cm(-1)) FTIR spectra in the nu(5) range of HSiD3 and monoisotopic (HSnD3)-Sn-120 were recorded and analyzed to yield ground state parameters by means of combination differences. The splitting of the ground state K = 3 level into A(+) and A(-) sublevels was detected and could be equivalently accounted for by two different models. Model I involves Delta k = +/- 3 interactions which affect all K levels. The value of the interaction constant epsilon strongly depends on those of C-0 and D-K,D-0, and J-dependent distortion parameters different to those from model II are obtained. This involves Delta k = +/- 6 interactions which account almost exclusively for the K = 3 splitting in the HMD(3) molecules, M = Si, Ge and Sn. Also including data for (HGeD3)-Ge-70, obtained from a re-analysis of previous nu(4) and nu(5) spectra for the K = 3 transitions, the following values of the model II splitting parameter h(3) were obtained (all in 10(-11) cm(-1)): (HSiD3)-Si-28 3.996(14), (HGeD3)-Ge-70 4.058(49), (HSnD3)-Sn-120 3.637(33).
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