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silanium cation | 41753-67-7

中文名称
——
中文别名
——
英文名称
silanium cation
英文别名
silyl cation;Silylium;silanylium
silanium cation化学式
CAS
41753-67-7
化学式
H3Si
mdl
——
分子量
31.1093
InChiKey
SCABQASLNUQUKD-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -1.18
  • 重原子数:
    1
  • 可旋转键数:
    0
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

SDS

SDS:7c63eb6b5a19bb26b33601ed8db62081
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反应信息

  • 作为反应物:
    描述:
    silanium cation 作用下, 生成 、 silacarbene
    参考文献:
    名称:
    质子亲合力和亚甲硅的形成热
    摘要:
    DOI:
    10.1021/j100399a009
  • 作为产物:
    描述:
    乙硅烷 以 gaseous matrix 为溶剂, 生成 silanium cation
    参考文献:
    名称:
    Infrared laser absorption spectroscopy of the SiH+3 cation
    摘要:
    Many vibration–rotation components of the ν2 fundamental of the SiH+3 cation have been measured using diode laser velocity modulation spectroscopy. By comparing the intensities of these components with their nuclear statistical weights, the ion is shown to be planar (D3h). The position of the ν2 band center is 838.0674(7) cm−1 and the ground state rotational constant is B0=5.2153(1) cm−1, r0=0.1462 nm. These results are compared with ab initio calculations.
    DOI:
    10.1063/1.462129
  • 作为试剂:
    描述:
    甲基自由基silanium cation 作用下, 以 gas 为溶剂, 生成 乙烷甲基硅烷
    参考文献:
    名称:
    Silicon-carbon bond formation kinetics: study of the reactions of methyl with silyl, trimethylsilyl, and trichlorosilyl
    摘要:
    The kinetics of three Si-C bond-forming association reactions were investigated at the high-pressure limit: SiH3 + CH3 (1), Si(CH3)3 + CH3 (2), and SiCl3 + CH3 (3). Rate constants were measured using a heatable tubular reactor coupled to a photoionization mass spectrometer. The two radical reactants were produced simultaneously (CH3 always in great excess) using pulsed 193-nm photolysis of suitable precursors diluted in helium, and the radical decays were monitored in time-resolved experiments. The radical decay profiles were fitted to appropriate expressions to obtain the desired rate constants. Reaction 1 was studied between 301 and 526 K yielding the following Arrhenius expression for the association reaction: k1 = (5.6 +/- 2.4) x 10(-11) exp((3.0 +/- 1.6) kJ mol-1/RT). (All rate constants are in the units cm3 molecule-1 s-1.) Reaction 2 was investigated between 306 and 526 K yielding the expression k2 = (5.2 +/- 2.2) x 10(-11) exp((2.4 +/- 1.4) kJ mol-1/RT). Reaction 3 was studied at one temperature, 303 k2 where k3 = (1.1 +/- 0.4) x 10(-10). Treating these association reactions as cross-combination reactions, the measured rate constants were found to be predicted with reasonable accuracy using the geometric mean rule and the rate constants of the related self-association reactions of the reactant radicals. The mechanisms of these reactions are discussed.
    DOI:
    10.1021/j100139a023
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文献信息

  • Boo; Armentrout, Journal of the American Chemical Society, 1991, vol. 113, # 18, p. 6401 - 6408
    作者:Boo、Armentrout
    DOI:——
    日期:——
  • H/D isotope exchange reaction of SiH<sup>+</sup><sub>3</sub> with SiD<sub>4</sub> and SiD<sup>+</sup><sub>3</sub> with SiH<sub>4</sub>: Evidence for hydride stripping reaction
    作者:W. D. Reents、M. L. Mandich
    DOI:10.1063/1.458860
    日期:1990.9
    We have measured the reaction rates and product distributions for SiHxD+3−x reactions with SiH4 and SiD4. The measured reaction rates for SiH+3 and SiD4 (26.1±1.0×10−10 cc/molecule s) and for SiD+3 and SiH4 (23.1±1.0×10−10 cc/molecule s) are greater than the calculated Langevin collision rate (12.3–12.4×10−10 cc/molecule s). Also, the product distribution observed for H/D exchange is nonstatistical. Dual, competing reaction mechanisms are invoked to account for these observations: reaction via formation of an ion-molecule complex and reaction via long-range hydride stripping. Using an expected product distribution calculated from reaction thermochemistries, the relative contributions of the two mechanisms is obtained for each reaction examined. The reaction rate for the ion-molecule complex mechanism is calculated to be at the Langevin collision rate within experimental error. The reaction rate for the stripping mechanism varies from 1–4×10−10 cc/molecule s (10–30% of the Langevin collision rate) for the mixed isotope ions SiH2D+ and SiHD+2 to 12–18×10−10 cc/molecule s (100%–150% of the Langevin collision rate) for the isotopically pure ions SiH+3 and SiD+3. The faster than Langevin reaction rates lower the expected low field mobility of SiH+3 in silane plasmas by 70% to ∼340 cm2 Torr/V s.
  • Proton affinity and heat of formation of silylene
    作者:Seung Koo Shin、J. L. Beauchamp
    DOI:10.1021/j100399a009
    日期:1986.4
  • Infrared laser absorption spectroscopy of the SiH<sup>+</sup><sub>3</sub> cation
    作者:D. M. Smith、P. M. Martineau、P. B. Davies
    DOI:10.1063/1.462129
    日期:1992.2
    Many vibration–rotation components of the ν2 fundamental of the SiH+3 cation have been measured using diode laser velocity modulation spectroscopy. By comparing the intensities of these components with their nuclear statistical weights, the ion is shown to be planar (D3h). The position of the ν2 band center is 838.0674(7) cm−1 and the ground state rotational constant is B0=5.2153(1) cm−1, r0=0.1462 nm. These results are compared with ab initio calculations.
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