氢化硅 | 13765-44-1

• 物质功能分类: 无机化工 - 单质
• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 中文名称: 氢化硅
• 英文名称: silyl
• CAS: 13765-44-1
• 化学式: H₃Si
• 分子量: 31.1093
• InChiKey: OLRJXMHANKMLTD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.18
• 重原子数：
  1
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  氢化硅 以 gas 为溶剂， 生成 乙硅烷
  参考文献：
  名称：

  Direct kinetic studies of SiH₃+SiH₃, H, CCl₄, SiD₄, Si₂H₆, and C₃H₆by tunable infrared diode laser spectroscopy

  摘要：

  Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy. Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems. The silyl recombination reaction, SiH3+SiH3→Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities. Analysis yields a refinement of the rate constant, krc=(7.9±2.9)×10−11 cm3 molecule−1 s−1. By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H+SiH3 and H+SiH4 are determined to be (2±1)×10−11 and (2.5±0.5)×10−13 cm3 molecule−1 s−1, respectively. Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions. Derived upper limits to the rate constants show these reactions to be slow at room temperature. The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules. Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.

  DOI：

  10.1063/1.461707
• 作为产物：
  描述：

  乙硅烷 以 gas 为溶剂， 生成 氢化硅
  参考文献：
  名称：

  Direct kinetic studies of SiH₃+SiH₃, H, CCl₄, SiD₄, Si₂H₆, and C₃H₆by tunable infrared diode laser spectroscopy

  摘要：

  Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy. Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems. The silyl recombination reaction, SiH3+SiH3→Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities. Analysis yields a refinement of the rate constant, krc=(7.9±2.9)×10−11 cm3 molecule−1 s−1. By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H+SiH3 and H+SiH4 are determined to be (2±1)×10−11 and (2.5±0.5)×10−13 cm3 molecule−1 s−1, respectively. Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions. Derived upper limits to the rate constants show these reactions to be slow at room temperature. The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules. Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.

  DOI：

  10.1063/1.461707
• 作为试剂：
  描述：

  四氯化碳 在 氢化硅 作用下， 生成 三氯甲基自由基 、 alkaline earth salt of/the/ methylsulfuric acid
  参考文献：
  名称：

  Direct kinetic studies of SiH₃+SiH₃, H, CCl₄, SiD₄, Si₂H₆, and C₃H₆by tunable infrared diode laser spectroscopy

  摘要：

  Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy. Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems. The silyl recombination reaction, SiH3+SiH3→Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities. Analysis yields a refinement of the rate constant, krc=(7.9±2.9)×10−11 cm3 molecule−1 s−1. By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H+SiH3 and H+SiH4 are determined to be (2±1)×10−11 and (2.5±0.5)×10−13 cm3 molecule−1 s−1, respectively. Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions. Derived upper limits to the rate constants show these reactions to be slow at room temperature. The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules. Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.

  DOI：

  10.1063/1.461707

文献信息

• Osmium tetroxide and its fragment ions in the gas phase: reactivity with hydrocarbons and small molecules
  作者：Karl K. Irikura、J. L. Beauchamp

  DOI：10.1021/ja00183a014

  日期：1989.1

  Etude des reactions ion-molecule de OsO n + avec: CH 4 , C 2 H 4 , C 2 H 6 , C 3 H 8 , C 4 H 10 , H 2 , CO, NH 3 et SiH 4 . On observe de nombreuses reactions

  OsO n + avec 离子-分子反应练习曲：CH 4 、C 2 H 4 、C 2 H 6 、C 3 H 8 、C 4 H 10 、H 2 、CO、NH 3 和SiH 4 。观察 de nombreuses 反应
• Absolute rate constants for the reaction of SiH with hydrogen, deuterium and silane
  作者：M.H. Begemann、R.W. Dreyfus、J.M. Jasinski

  DOI：10.1016/0009-2614(89)87168-4

  日期：1989.3

  photolysis and its concentration monitored in real time by laser-induced fluorescence. Removal rates for SiH by hydrogen, deuterium and silane have been determined at 5 Torr total pressure in helium at ambient temperature. Silylidyne reacts gas-kinetically with silane, but considerably more slowly with hydrogen and deuterium.

  准分子激光闪光光解产生了Silylidyne（SiH），并通过激光诱导的荧光实时监测其浓度。在环境温度下，在氦气中的总压力为5 Torr时，已确定了氢，氘和硅烷对SiH的去除速率。硅氢炔与硅烷发生气动力学反应，但与氢和氘的反应要慢得多。
• Kinetics of the reactions of SiH3 with O2 and N2O
  作者：Irene R. Slagle、James R. Bernhardt、David Gutman

  DOI：10.1016/0009-2614(88)87218-x

  日期：1988.8

  The kinetics of the reactions SiH3 + O2 and SiH3 + N2O have been investigated using time-resolved photoionization mass spectrometric detection of SiH3. Rate constants for the SiH3+O2 reaction were determined from 296 to 500 K (k= 4.96 × 10−12 exp (275/T) cm3 molecule−1 s−1. An upper limit for the SiH3 + N2O rate constant at 500 K was also established (5 × 10−15 cm3 molecule−1 s−1).

  SiH 3 + O 2和SiH 3 + N 2 O的反应动力学已使用时间分辨光电离质谱法检测SiH 3进行了研究。为使SiH速率常数3 + O 2从296被确定为500K反应（ķ = 4.96×10 -12 EXP（275 / Ť）厘米3分子-1小号-1。上限为使SiH 3 + N 2还确定了在500 K时的O速率常数（5×10 -15 cm 3分子-1s -1）。
• A new eletronic spectrum of the SiH3 radical observed using multiphoton ionization spectroscopy
  作者：Russell D. Johnson、Jeffrey W. Hudgens

  DOI：10.1016/0009-2614(87)85002-9

  日期：1987.11

  The silyl radical, SiH3, was observed between 365 and 410 nm using resonance-enhanced multiphoton ionization spectroscopy. The spectrum arises from two-photon resonance states which lie between 49229 and 54014 cm−1. A vibrational progression interval of ≈ 800 cm−1 was assigned to the resonant intermediate state symmetric deformation mode, ν2.

  使用共振增强多光子电离光谱法在365和410 nm之间观察到甲硅烷基自由基SiH 3。光谱由位于49229和54014 cm -1之间的双光子共振态产生。振动进展≈800厘米间隔-1被分配到中间态共振对称的变形模式，v 2。
• The time-resolved LMR method as used to measure elementary reaction rates of CI atoms and SiH3 radicals in pulse photolysis of S2Cl2 in the presence of SiH4
  作者：L.N. Krasnoperov、E.N. Chesnokov、V.N. Panfilov

  DOI：10.1016/0301-0104(84)85317-3

  日期：1984.9

  pulse photolysis of a mixture of S2Cl2 + SiH4 under the fourth harmonic of a Nd laser (265 nm, 0.5 mJ, 12.5 Hz) at a total pressure of 520–980 Pa (he as diluent) and a temperature of 326 K. The reagent concentrations were: [S2Cl2 = (2.0−10.2)×1014 cm−3, [SiH4 = (2.4−17.4)×1013 cm−3. To remove the transition saturation, 5.3×1015 cm−3 CCl4 was introduced into the reactor. The fraction of dissociated S2Cl2

  时间分辨激光磁共振（LMR）方法已首次应用于动力学测量。已经使用基于CO 2激光器的腔内光谱仪，其具有磁场的共振调制并且具有信号的相敏检测。在Nd激光（265 nm，0.5 mJ，12.5 Hz）的四次谐波下，在S 2 Cl 2 + SiH 4的混合物的脉冲光解下，获得了CI原子和SiH 3自由基的生成和消失的动力学曲线。总压力为520–980 Pa（用作稀释剂），温度为326K。试剂浓度为：[S 2 Cl 2 =（2.0-10.2）×10 14 cm-3，[SiH 4＝（2.4-17.4）×10 13 cm -3。为了去除过渡饱和，将5.3×10 15 cm -3 CCl 4引入反应器中。离解的S 2 Cl 2的分数为1‰反应的速率常数（I）Cl + S 2 Cl 2 →产物，（II）Cl + SiH 4 →HCl + SiH 3和反应的初步速率常数（III） ）的SiH 3 + S 2氯2