硫酸盐离子 | 14835-14-4

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 类金属盐
• 中文名称: 硫酸盐离子
• 英文名称: trifluorosilyl radical
• CAS: 14835-14-4
• 化学式: F₃Si
• 分子量: 85.0807
• InChiKey: ATVLVRVBCRICNU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.88
• 重原子数：
  4
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  硫酸盐离子 生成 bis(trifluorosilyl)cadmium
  参考文献：
  名称：

  GUERRA, M. A.;BIERSCHENK, T. R.;LAGOW, R. J., J. AMER. CHEM. SOC., 1986, 108, N 14, 4103-4105

  摘要：

  DOI：
• 作为产物：
  描述：

  trifluorosilanylium 在 均三甲苯 作用下， 生成 硫酸盐离子
  参考文献：
  名称：

  Electron‐impact ionization cross sections of the SiF₃ free radical

  摘要：

  Absolute cross sections for electron-impact ionization of the SiF3 free radical from threshold to 200 eV are presented for formation of the parent SiF+3 ion and the fragment SiF+2, SiF+, and Si+ ions. A 3 keV beam of SiF3 is prepared by near-resonant charge transfer of SiF+3 with 1,3,5-trimethylbenzene. The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy. The absolute cross section for formation of the parent ion at 70 eV is 0.67±0.09 Å2. At 70 eV the formation of SiF+2 is the major process, having a cross section 2.51±0.02 times larger than that of the parent ion, while the SiF+ fragment has a cross section 1.47±0.08 times larger than the parent. Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.

  DOI：

  10.1063/1.454836

文献信息

• Unstable intermediates. Part 167. Electron spin resonance studies of trifluorosilyl and related radicals
  作者：Martyn C. R. Symons

  DOI：10.1039/dt9760001568

  日期：——

  not obtained from O(SiF3)2 or SiF3(NMe2), but species similar to A containing two strongly coupled 19F nuclei have been detected. These are identified as F2SiOSiF3 and SiF2(NMe2) respeclively. The radical O(SiF3) is obtained in certain samples of SiF4.

  的SiF暴露4至60条钴γ在77K射线给出显示强超精细耦合到一个物种（A）29 Si和三个19与弱耦合˚F核，一起到四个其它等效19 ˚F核。该物种暂定为与邻近的SiF 4分子弱相互作用的SiF 3 ,，但讨论了其他可能性，从Si 2 F 6和SiF 3 H一起获得了与A非常相似但具有不同亚结构的物种。在后一种情况下用SiF 2 H 3。物种A不是从O（SiF 3）2或SiF 3（NMe 2），但已检测到类似于A的物种，其中包含两个强耦合的19 F核。这些分别被明确地标识为F 2 SiOSiF 3和SiF 2（NMe 2）。在某些SiF 4样品中获得了基团O（SiF 3）。
• An XPS study of XeF2 dry etching of tungsten silicide
  作者：E. Grossman、A. Bensaoula、A. Ignatiev

  DOI：10.1016/0039-6028(88)90575-4

  日期：1988.1

  (QCM) measurements have been used to study the etching of WSi0.6 by XeF2. Preferential etching of Si was observed for spontaneous etching and ion beam assisted etching. The Si removal from the WSi matrix created defects which enhanced the spontaneous etch rate by up to 30 times over that of the W(100) etch rate. The surface composition of WSi0.6 changed under XeF2 exposure with the observation of WF

  X 射线光电子能谱 (XPS) 和石英晶体微量天平 (QCM) 测量已被用于研究 XeF2 对 WSi0.6 的蚀刻。对于自发蚀刻和离子束辅助蚀刻，观察到 Si 的优先蚀刻。从 WSi 基体中去除 Si 产生的缺陷使自发蚀刻速率比 W(100) 蚀刻速率提高了 30 倍。通过观察 WF、SiF 和 SiF3 以及捕获在反应层中的挥发性反应产物 SiF4，WSi0.6 的表面组成在 XeF2 暴露下发生了变化。
• The interaction of WF6 with Si(100); thermal and photon induced reactions
  作者：R.B. Jackman、J.S. Foord

  DOI：10.1016/0039-6028(88)90596-1

  日期：1988.1

  Abstract The thermal and UV photon-induced interaction between WF6 and Si(100) has been examined using AES and thermal desorption mass spectrometry. At 77 K WF6 physisorbs on the silicon surface. Above 150 K dissociative chemisorption phases are formed, which decompose in three distinct stages as the temperature is raised in the range 300–900 K to desorb silicon fluoride and produce a Si/W interface

  摘要 已使用 AES 和热解吸质谱法检查了 WF6 和 Si(100) 之间的热和紫外光子诱导相互作用。在 77 K WF6 物理吸附在硅表面上。高于 150 K 时会形成解离化学吸附相，随着温度在 300-900 K 范围内升高，其分解为三个不同的阶段，以解吸氟化硅并产生 Si/W 界面。结果表明，WF6 在高于 300 K 的 Si(100) 上迅速形成薄腐蚀膜，随着该层开始增厚，这会产生明显的钝化效果。快速反应需要 Si 相互扩散到该生长膜中并解吸氟化硅；因此，稳态反应速率在 300-400 K 的温度范围内显着增加，这些过程的速率上升到与表面的 WF6 通量相当。SiFx 物种的自发进化被观察为化学吸附的竞争途径，并讨论了这种现象的起源。来自氘灯的低强度紫外光被发现对 WF6 在 Si(100) 上形成的解离态没有影响。相比之下，发现光子照射会导致分子吸收的 WF6 快速解离，导致
• Gas phase reactions of SiF2 with F2 and Cl2
  作者：A.C. Stanton、A. Freedman、J. Wormhoudt、P.P. Gaspar

  DOI：10.1016/0009-2614(85)80561-3

  日期：1985.12

  Reactions of SiF2 radicals have been studied in a fast-flow system. Rate constants at 295 K of (4.7±0.3)×10−13 cm3 molecule−1 s−1 for the reaction of SiF2 + F2, and (5.1±0.6)×10−13 cm3 molecule−1 s−1 for SiF2 + Cl2 were obtained. No reaction was observed with O2 and H2. SiF2 was detected by laser-induced fluorescence, and lifetime observations and an excitation spectrum are reported.

  已经在快速流动系统中研究了SiF 2自由基的反应。在295K下的（4.7±0.3）×10速率常数-13厘米3分子-1小号-1为的SiF的反应2 + F 2，和（5.1±0.6）×10 -13厘米3分子-1小号- 1对的SiF 2 +氯2获得。没有观察到与O 2和H 2的反应。通过激光诱导的荧光检测SiF 2，并报告寿命观察和激发光谱。
• Hexapole-selected supersonic beams of reactive radicals: CF3, SiF3, SH, CH, and C2H
  作者：Michael A. Weibel、Toby D. Hain、Thomas J. Curtiss

  DOI：10.1063/1.475711

  日期：1998.2.22

  A supersonic corona discharge source was used to produce molecular beams of plasma particles. Neutral, polar components of the plasma mixture were selectively focused by an electrostatic hexapole, thereby “simplifying” the chemical and rotational state composition of the beam. Careful choice of a radical precursor, combined with control of discharge and hexapole voltage allowed the production of pure beams of CF3, SiF3, and SH (purity typically better than 90%), with no noticeable signal arising from undissociated precursor, ions, or other radicals. Focused beams from a hydrocarbon plasma contained a radical mixture of predominantly CH and C2H. Radical beams were characterized by rotationally and translationally cold temperatures (typically TR<20 K and TS<20 K, respectively) and high intensities (typically 1011–1012 cm−2 s−1). Simulated focusing spectra using classical trajectory calculations showed generally good agreement with the experimental data, leading to the first experimental measurement of the permanent electric dipole moment of SiF3 (μ=1.2±0.1 D).