IR spectroscopic andab initio quantum-chemical study of the products of hydrolysis of silicon tetrafluoride at low water concentrations
作者:P. G. Sennikov、M. A. Ikrin、S. K. Ignatov、A. A. Bagatur'yants、E. Yu. Klimov
DOI:10.1007/bf02494407
日期:1999.1
According to the results of IR spectroscopicstudy and quantum-chemical calculations, hydroxo derivatives SiF4-x(OH)x are formed in the course of hydrolysis of silicon tetrafluoride in the presence of small amount of water along with hexafluorodisiloxane.
(F3SiS)2SiF2. Diese Fluorsilylsulfane haben eine bemerkenswert unterschiedliche thermische Stabilitat. Wahrend sich (F3SiS)2SiF2 bereits bei Raumtemperatur zersetzt, ist das bei dieser Temperatur stabile (F3Si)2S eine vielseitige Ausgangsverbindung zur Synthesevon F3Si-Derivaten. Das Silylsulfan F3SiSH konnte neben F3SiBr durch selektive Spaltung einer SiS-Bindung von flussigem (F3Si)2S mit HBr in reiner
Unstable intermediates. Part 167. Electron spin resonance studies of trifluorosilyl and related radicals
作者:Martyn C. R. Symons
DOI:10.1039/dt9760001568
日期:——
not obtained from O(SiF3)2 or SiF3(NMe2), but species similar to A containing two strongly coupled 19F nuclei have been detected. These are identified as F2SiOSiF3 and SiF2(NMe2) respeclively. The radical O(SiF3) is obtained in certain samples of SiF4.
Kinetics and mechanism of the gas-phase pyrolysis of hexafluorodisilane in the presence of iodine and some reactions of silicon difluoride
作者:Swroop K. Bains、Paul N. Noble、Robin Walsh
DOI:10.1039/f29868200837
日期:——
gas-phase thermal decomposition of Si2F6 in the presence of I2 has been found to follow first-order kinetics with the formation of SiF4, SiF2I2 and SiF3I. The reactions appear to be homogeneous and consistent with the mechanism: Si2F6→ SiF2+ SiF4(slow)(1), SiF2+ I2→ SiF2I2(fast).(2) SiF3I is a minor product and its mechanism of formation is uncertain. Rate measurements over the temperature range 603–652
Si的气相热分解2 ˚F 6中的我的存在2已发现遵循一级动力学与的SiF的形成4,的SiF 2我2和SIF 3 I.反应似乎是均匀的,一致的其机理为:Si 2 F 6 →SiF 2 + SiF 4(慢)(1),SiF 2 + I 2 →SiF 2 I 2(快速)。(2)SiF 3我是次要产品,其形成机理尚不确定。在603–652 K温度范围内的速率测量符合Arrhenius方程:log(k 1 / s –1)=(12.41±0.24)–(193.5±2.9 kJ mol –1)/ R T ln 10。在630 K下,发现SiF 2与I 2的反应比与O 2的反应快3.6倍,比HI快17倍。SiF 2与I 2的反应也比与HBr或苯的反应至少快10 2倍,比SiF 4的反应快10 4倍以上。缺少I原子位移过程是一致d(F 3的Si-的SiF 3)337千焦耳摩尔-1,这导致值Δ ħ ⊖ ˚F(SI
Gas-phase oxidation of vinyltrifluorosilane with nitrogen dioxide under the action of a pulse CO2 laser
作者:P. S. Dement’ev、P. V. Koshlyakov、E. N. Chesnokov
DOI:10.1134/s0023158410050022
日期:2010.10
A chemical reaction between C2H3SiF3 and NO2 induced by radiation from a pulse CO2 laser was studied by mass spectrometry and IR spectroscopy. The composition of gaseous products was determined. A macrokinetic approach was developed to study bimolecular reactions initiated by pulsed IR radiation. The procedure developed allowed us to answer the question of whether the test reaction occurs under conditions
通过质谱和红外光谱研究了脉冲CO 2激光辐射引起的C 2 H 3 SiF 3和NO 2之间的化学反应。确定了气态产物的组成。开发了一种宏观动力学方法来研究由脉冲红外辐射引发的双分子反应。开发的程序使我们能够回答测试反应是在仅一种反应物的分子被振动激发的条件下还是在相等振动温度的条件下发生的问题。这种方法在C 2 H 3 SiF 3和NO 2之间反应的应用 证明了它的加速是由于系统的平衡加热。