pentatungsten trisilicide | 12039-95-1

• 物质功能分类: 无机化工 - 无机盐 - 硅化物及硅酸盐
• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: pentatungsten trisilicide
• 英文别名: W5-silicide；tungsten silicide；Silane--tungsten (3/5)；silane;tungsten
• CAS: 12039-95-1
• 化学式: Si₃W₅
• 分子量: 1003.51
• InChiKey: HTRFDPNFAMGBKW-UHFFFAOYSA-N

物化性质

• 熔点：
  2320°C
• 密度：
  14.400

计算性质

• 辛醇/水分配系数(LogP)：
  -4.37
• 重原子数：
  8.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  氨 、 pentatungsten trisilicide 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  真空退火下反应溅射 W-Si-N 薄膜的成分和电阻率变化

  摘要：

  具有不同氮含量的约 200nm 厚的 W-Si-N 层是从氧化硅衬底上的 W5Si3 靶材反应溅射出来的。用离子束分析和四点探针测量研究了薄膜组成和电阻率的热稳定性。在从 600 到 980°C 真空退火 1.5 小时后，初始氮含量为 56at.% 的样品的氮含量逐渐下降至 36%。该成分靠近 W-Si3N4 连接线。同时，室温电阻率从 4.7 降至约 2mΩcm。对于初始成分接近 W-Si3N4 连接线的样品，其成分变化很小，电阻率的变化明显小于富氮薄膜。讨论了解释。

  DOI：

  10.1063/1.2166691
• 作为产物：
  描述：

  硅烷 、 钨 以 neat (no solvent) 为溶剂， 生成 pentatungsten trisilicide
  参考文献：
  名称：

  4d和5d硅化物的电子结构

  摘要：

  一个系统的实验；介绍了含 Nb、Mo、Ta 和 W 的化学计量硅化物的电子结构和理论研究。作者采用 X 射线光电子发射和轫致辐射等色光谱作为实验技术，并通过计算化合物在其真实晶体结构中的态密度和基体元素来解释测量数据。还使用文献中给出的X射线发射光谱。主要根据与各种相互作用（例如金属-金属、金属-Si 和 Si-Si 相互作用）相关的 Si s、p 和金属 d 态来分析电子结构。在讨论化学键合的趋势时，他们关注轨道重叠、d 带占有率和成分的影响。

  DOI：

  10.1088/0953-8984/1/46/006

文献信息

• Tungsten Disilicide (WSi ₂ ): Synthesis, Characterization, and Prediction of New Crystal Structures
  作者：Jelena Luković、Dejan Zagorac、J. Christian Schön、Jelena Zagorac、Dragana Jordanov、Tatjana Volkov‐Husović、Branko Matović

  DOI：10.1002/zaac.201700329

  日期：2017.12.13

  has been synthesized by simple thermal treatment at 1350 °C for 4 h in an argon atmosphere. These optimal synthesis conditions were obtained by variation of temperatures and times of heating, and the structure of the final synthesized compound has been determined by XRPD analysis. In addition, new modifications for WSi2 have been proposed and investigated using first-principles calculations within density-functional

  过渡金属硅化物因其在微电子、陶瓷和航空航天工业中的潜在应用而备受关注。在这项研究中，对钨基硅化物进行了实验和理论研究。二硅化钨 (WSi2) 在氩气气氛中通过简单的热处理在 1350 °C 下 4 小时合成。这些最佳合成条件是通过改变温度和加热时间获得的，最终合成化合物的结构已通过 XRPD 分析确定。此外，已经提出并使用密度泛函理论 (DFT) 中的第一性原理计算对 WSi2 进行了新的修改。
• High Frequency Induction Heated Synthesis and Consolidation of Nanostructured TaSi<SUB>2</SUB>-WSi<SUB>2</SUB> Composite
  作者：In-Jin Shon、Hyun-Su Kang

  DOI：10.1166/jnn.2015.10422

  日期：2015.7.1

  A dense nanostructured TaSi2-WSi2 composite was simultaneously synthesized and sintered by the high frequency induction heating method within 2 minutes from mechanically activated powder of Ta, W and Si. A highly-dense TaSi2-WSi2 composite was produced under simultaneous application of a 80 MPa pressure and the induced current. The mechanical properties and microstructure were investigated.

  通过高频感应加热法，在2分钟内同时合成并烧结了由Ta、W和Si的机械活化粉末制成的致密纳米结构TaSi2-WSi2复合材料。在同时施加80MPa压力和感应电流的作用下，制备出了高致密TaSi2-WSi2复合材料。对材料的力学性能和微观结构进行了研究。
• Determination of the standard free energies of formation for tungsten silicides by EMF measurements using lithium silicate liquid electrolyte
  作者：Hiroyasu Fujiwara、Yukitomi Ueda、Alok Awasthi、Nagaiyar Krishnamurthy、Sheo Parkash Garg

  DOI：10.1016/j.jallcom.2004.08.100

  日期：2005.4

  Abstract EMF measurements on silicon concentration cell were carried out using lithium silicate electrolyte in the temperature range 1300–1500 K. Using the EMF–temperature relations obtained, the standard free energies of formation for W5Si3 and WSi2 have been calculated as functions of temperature: ΔG0(W5Si3) (kJ mol−1) = −128.6 − 0.0132 (T (K)) ± 0.42 and ΔG0(WSi2) (kJ mol−1) = −98.5 + 0.0095 (T

  摘要 使用硅酸锂电解液在 1300-1500 K 温度范围内对硅浓差电池进行 EMF 测量。使用获得的 EMF-温度关系，W5Si3 和 WSi2 的标准形成自由能已计算为温度的函数：ΔG0 (W5Si3) (kJ mol−1) = -128.6 − 0.0132 (T (K)) ± 0.42 和 ΔG0(WSi2) (kJ mol−1) = -98.5 + 0.0095 (T (K)) ± 0.15。将结果与热力学数据相结合，得到了 298 K 硅化物的标准生成焓为 ΔH0(W5Si3, 298) (kJ mol−1) = -133 ± 25 和 ΔH0(WSi2, 298) (kJ mol−1 ) = −82 ± 6，分别。在 W-Si 二元系统中，建议在 700 K 附近发生新的共析反应 W5Si3 ⇒ W + WSi2。
• Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface
  作者：S. V. Plyushcheva、G. M. Mikhailov、L. G. Shabel’nikov、S. Yu. Shapoval

  DOI：10.1134/s002016850902006x

  日期：2009.2

  The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetron deposition used for comparison purposes. It is shown that a nanometer tungsten silicide W5Si3 layer is formed at the tungsten-silicon interface only under gas-phase deposition. The effect of annealing on the specimen composition and surface resistance is investigated. It is shown that the formation and growth of a silicide WSi2 layer commences at 700A degrees C for CVD films and at above 750A degrees C for films obtained with plasmochemical deposition; this results in a drastic increase in their electrical resistance. Under optimal conditions, tungsten films of 8 x 10 -6 Omega cm resistivity are produced.
• One component metal sintering additive for β-SiC based on thermodynamic calculation and experimental observations
  作者：Alfian Noviyanto、Dang-Hyok Yoon

  DOI：10.1016/j.materresbull.2011.04.014

  日期：2011.8

  Various types of metals were examined as sintering additives for beta-sic by considering the standard Gibbs formation free energy and vapor pressure under hot pressing conditions (1973-2123 K), particularly for applications in nuclear reactors. Metallic elements having the low long-term activation under neutron irradiation condition, such as Cr, Fe, Ta, Ti, V and W, as well as widely used elements, Al, Mg and B, were considered. The conclusions drawn from thermodynamic considerations were compared with the experimental observations. Al and Mg were found to be effective sintering additives, whereas the others were not due to the formation of metal carbides or silicides from the decomposition of SiC under hot pressing conditions. (C) 2011 Elsevier Ltd. All rights reserved.