zinc telluride

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: zinc telluride
• 化学式: TeZn
• 分子量: 192.99
• InChiKey: NONZSYFTUZYXBH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.92
• 重原子数：
  2.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  zinc telluride 在 acid 作用下， 以 not given 为溶剂， 生成 碲化氢
  参考文献：
  名称：

  Bruckl, A., Monatshefte fur Chemie

  摘要：

  DOI：
• 作为产物：
  描述：

  [Zn(TePh)3(tmeda)] 在 porous alumina 作用下， 以 solid matrix 为溶剂， 生成 zinc telluride
  参考文献：
  名称：

  “一只鸟四只鸟”：从单一来源的前体合成ZnTe，Te，ZnAl2O4和Te / ZnAl2O4的纳米结构。

  摘要：

  DOI：

  10.1002/anie.200602093
• 作为试剂：
  描述：

  di-n-propyl telluride 在 zinc telluride 、 氢气 、 Dimethylzinc 作用下， 生成 propane-1-tellurol 、 Di-n-propylditellurid
  参考文献：
  名称：

  Reaction Chemistry of ZnTe Metalorganic Vapor-Phase Epitaxy

  摘要：

  The reaction chemistry of zinc telluride (ZnTe) metalorganic vapor-phase epitaxy (MOVPE) from dimethylzinc (DMZn), diethylzinc (DEZn), and diisopropyltelluride (DIPTe) has been studied using on-line gas chromatography and infrared spectroscopy. Two growth regimes have been discovered: one at low values of the II/VI ratio and the other at higher values of the II/VI ratio. In the first regime, the group VI compound is consumed in excess, while in the second regime, the group II compound is consumed in excess. The crossover point lies at II/VI = 5.0 for DMZn and at II/VI = 0.3 for DEZn. Stoichiometric ZnTe is deposited under all growth conditions. The excess DIPTe consumed is converted into volatile diisopropylditelluride and isopropyltellurol. Conversely, the excess DEZn or DMZn consumed produces zinc metal. These waste byproducts accumulate in the outlet of the reactor. The hydrocarbon products generated from the ethyl and isopropyl ligands are indicative of radical disproportionation, recombination, and hydrogenation reactions. However, the methyl ligands mainly undergo surface hydrogenation to produce methane.

  DOI：

  10.1021/jp963990c

文献信息

• Molecular beam epitaxy of a low strain II‐VI heterostructure: ZnTe/CdSe
  作者：H. Luo、N. Samarth、F. C. Zhang、A. Pareek、M. Dobrowolska、J. K. Furdyna、K. Mahalingam、N. Otsuka、W. C. Chou、A. Petrou、S. B. Qadri

  DOI：10.1063/1.105090

  日期：1991.4.22

  We report the growth of a new closely lattice‐matched II‐VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x‐ray diffraction,

  我们报告了一种新的紧密晶格匹配的 II-VI 异质结构的生长：ZnTe/CdSe (Δa/a∼0.3%)。生长在 ZnTe 缓冲层上的闪锌矿 CdSe 外延层的质量比之前在 GaAs 衬底上生长的外延层（具有 7% 的失配）要好得多。这使得 ZnTe/CdSe 的高质量超晶格的首次成功生长成为可能。通过X射线衍射、透射电子显微镜和光学技术研究了超晶格。光致发光和光透射测量结果表明 ZnTe/CdSe 超晶格具有非常小的价带偏移。
• Electrochemical texturization of ZnTe surfaces
  作者：F. Zenia、C. Lévy-Clément、R. Triboulet、R. Könenkamp、K. Ernst、M. Saad、M. C. Lux-Steiner

  DOI：10.1063/1.124438

  日期：1999.7.26

  We report the results of electrochemical etching on ZnTe crystals using the acidic etchant HNO3:HCl:H2O. Under optimized conditions we are able to etch several micrometer deep patterns into 〈111〉 and 〈110〉 surfaces. A comparison between etched and polished crystals shows that a surface enlargement of approximately 50 times can be obtained. The etched surfaces have strongly reduced optical reflectance

  我们报告了使用酸性蚀刻剂 HNO3:HCl:H2O 对 ZnTe 晶体进行电化学蚀刻的结果。在优化条件下，我们能够在<111> 和<110> 表面蚀刻几微米深的图案。蚀刻和抛光晶体之间的比较表明，可以获得大约 50 倍的表面放大。蚀刻表面具有强烈降低的光反射率、高光致发光效率和优异的光敏性。可以制备针状结构，其表现出激子跃迁能量的蓝移，表明部分蚀刻图案处于量子限制状态。
• The Simultaneous Oxidation of Tellurium and Transition Metals by AsF5 – Syntheses and Crystal Structures of [M(SO2)6](Te6)[AsF6]6 (M = Ni, Zn) and [Cd(SO2)2][AsF6]2
  作者：Johannes Beck、Folker Steden、Marcus Zink

  DOI：10.1002/zaac.200500440

  日期：2006.6

  by [AsF6]− ions. The analogous reaction starting from CdTe did not yield a compound containing simultaneously [Cd(SO2)n]2+ complexes and tellurium polycations but instead Te6[AsF6]4 · 2 SO2 besides [Cd(SO2)2][AsF6]2 were obtained. It crystallizes isotypically to [Mn(SO2)2][AsF6]2 (Mews, Zemva, 2001) (orthorhombic, Fdd2, a = 1534.96(3), b = 1812.89(3), c = 892.28(3) pm, V = 2483·106 pm3, Z = 4).

  元素镍和碲以及 ZnTe 与过量 AsF5 在液态 SO2 中的反应产生橙色晶体形式的 [M(SO2)6](Te6)[AsF6]6 (M = Ni, Zn)。晶体结构测定（三斜, , M = Ni: a = 1632.59(2), b = 1795.06(1), c = 1822.97(2) pm, α = 119.11(4), β = 90.78(4), γ = 106.28(4)°, V = 4408.24(8)·106pm3, Z = 4) 表明这两种化合物是同型的。这些结构由离散的 [M(SO2)6]2+ 复合物、Te64+ 簇和八面体 [AsF6]- 离子组成。在 [M(SO2)6]2+ 络合物中，金属离子被六个通过 O 原子结合的 SO2 分子八面体包围。Te64+ 聚阳离子是三角棱柱形状，三角形面内有短 Te-Te 键 (270 pm)，沿平行于棱柱伪 C3 轴的边缘 (312
• ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
  作者：E. Janik、J. Sadowski、P. Dłużewski、S. Kret、L. T. Baczewski、A. Petroutchik、E. Łusakowska、J. Wróbel、W. Zaleszczyk、G. Karczewski、T. Wojtowicz、A. Presz

  DOI：10.1063/1.2357334

  日期：2006.9.25

  ZnTe nanowires with an average diameter of about 30nm and lengths above 1μm were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3–20A thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55° to the (100) substrate

  通过分子束外延在GaAs(100)衬底上生长平均直径约30nm、长度大于1μm的ZnTe纳米线。生长过程基于Au催化的气-液-固机理。在纳米线生长之前在高真空中退火的薄金层（3-20A 厚）用作催化纳米颗粒的来源。纳米线相对于 (100) 衬底表面法线倾斜约 55°。它们具有闪锌矿晶体结构，生长轴为⟨111⟩。
• Low temperature synthesis of binary chalcogenides
  作者：N. Yellin、L. Ben-Dor

  DOI：10.1016/0025-5408(83)90059-4

  日期：1983.7

  Abstract Synthesis of tellurides and selenides of Hg, Cd, Zn, Ge, Sn and Pb at temperatures considerably below the melting point of the compounds, was studied. The reaction went to completion within a few days.

  摘要 研究了在远低于化合物熔点的温度下合成 Hg、Cd、Zn、Ge、Sn 和 Pb 的碲化物和硒化物。反应在几天内完成。