chromium silicide | 12018-08-5

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: chromium silicide
• 英文别名: Chromium--silane (1/1)；chromium;silane
• CAS: 12018-08-5
• 化学式: CrSi
• 分子量: 80.0815
• InChiKey: IAEUMDDPMIQNPQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.45
• 重原子数：
  2.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  chromium silicide 在 sodium nitrate 作用下， 生成 铬
  参考文献：
  名称：

  Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Cr: MVol.A1, 5.1.1, page 213 - 217

  摘要：

  DOI：
• 作为产物：
  描述：

  chromium disilicide 在 碘 作用下， 以 neat (no solvent) 为溶剂， 生成 chromium silicide
  参考文献：
  名称：

  Krausze, R.; Khristov, M.; Peshev, P., Zeitschrift für anorganische und allgemeine Chemie

  摘要：

  DOI：

文献信息

• Phase formation in Cr‐Si thin‐film interactions
  作者：E. G. Colgan、B. Y. Tsaur、J. W. Mayer

  DOI：10.1063/1.91767

  日期：1980.11.15

  both unreacted Cr and Si are present, the CrSi2 phase is formed. The phase grows until the Si is completely consumed, and then a metal‐rich phase, Cr5Si3, is formed at the Cr‐CrSi2 interface. Upon further heating of samples with a Cr:Si ratio of 3.0, Cr5Si3 reacts with Cr to form a more Cr‐rich phase, Cr3Si. The CrSi phase was observed only in samples with a Cr:Si ratio of 1. All the compounds present

  通过 MeV 4He+ 背向散射和掠射入射 X 射线衍射研究了 Cr-Si 薄膜样品中硅化物的形成。SiO2/Cr/Si 配置的样品是通过将 Cr 和 Si 连续电子枪沉积到 SiO2 基板上制备的，相对膜厚调整为 3.0 (Cr3Si)、1.67 (Cr5Si3) 和 1.0 (CrSi) 的 Cr:Si 比. 当未反应的 Cr 和 Si 都存在时，在相形成的早期阶段，形成了 CrSi2 相。该相一直生长到 Si 被完全消耗，然后在 Cr- 界面形成富金属相 Cr5Si3。在进一步加热 Cr:Si 比为 3.0 的样品时，Cr5Si3 与 Cr 反应形成更富铬的相 。仅在 Cr:Si 比率为 1 的样品中观察到 CrSi 相。观察到相图中存在的所有化合物。
• X-ray-emission studies of chemical bonding in transition-metal silicides
  作者：P. J. W. Weijs、H. van Leuken、R. A. de Groot、J. C. Fuggle、S. Reiter、G. Wiech、K. H. J. Buschow

  DOI：10.1103/physrevb.44.8195

  日期：——

  We present Si L2,3 emission-band spectra of a series of 3d and 4d transition-metal (TM) silicides, together with Si K emission-band spectra of four 3d TM disilicides. The data are compared with augmented-spherical-wave density-of-states (DOS) calculations, and good agreement is found. The trends we find are explained with a general scheme for chemical bonding in TM silicides. The differences between the experimental data and the calculated DOS curves are tentatively attributed to self-energy effects.
• XRD and XPS characterisation of transition metal silicide thin films
  作者：P.L. Tam、Y. Cao、L. Nyborg

  DOI：10.1016/j.susc.2011.10.015

  日期：2012.2

  Binary transition metal suicides based on the systems Ti-Si, Fe-Si, Ni-Si and Cr-Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti-Si, Fe-Si and Ni-Si systems, single phase thin films of TiSi2, beta-FeSi2 and NiSi2 were generated as the model predicts, while a mixture of CrSi + CrSi2 phases was obtained for the Cr-Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p(3/2) peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p(3/2) peak of NiSi2 is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p(3/2) level was shown for beta-FeSi2 and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi2 and TiSi2, respectively. (C) 2011 Elsevier B.V. All rights reserved.
• Silicide coating on refractory metals in molten salt
  作者：K. Tatemoto、Y. Ono、R.O. Suzuki

  DOI：10.1016/j.jpcs.2004.06.043

  日期：2005.2

  For better oxidation resistance of refractory metals in air, the electroless coating of silicide in the molten salt was developed in open air at 973-1173 K. The molten salt consists of NaCl, KCl, Na2SiF6 and Si powder, where the proportional reaction between Si and Si4+ ions forms Si2+ ions. Si2+ deposits on the metal substrate and forms the metal silicide. The deposited silicide layers were classified into two categories depending on the metal substrates: (1) Nb, Mo and Cr mainly formed silicon-rich disilicide (MSi2) layer. (2) Fe, Ni and Co formed silicon-poor silicide layer (MSin, n < 2), such as Fe3Si. This difference was described by the diffusivity of Si through the silicide layer into the metal. (c) 2004 Elsevier Ltd. All fights reserved.
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