aluminum gallium | 39399-55-8

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: aluminum gallium
• 英文别名: Aluminium--gallium (1/1)；alumane;gallane
• CAS: 39399-55-8
• 化学式: AlGa
• 分子量: 96.7045
• InChiKey: NMARMSBNLMKPIK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.37
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  aluminum gallium 、 三叔丁基镓 、 arsenic 在 苯硫酚 作用下， 以 further solvent(s) 为溶剂， 以75%的产率得到gallium aluminium arsenide
  参考文献：
  名称：

  Phase Separation in Al_xGa_1-xAs Nanowhiskers Grown by the Solution−Liquid−Solid Mechanism

  摘要：

  Low-temperature growth of AlxGa1-xAs by the solution - liquid-solid mechanism affords nanowhiskers having two specific overall compositions: x = 0.1 and 0.8. Intermediate compositions (0.1 < x < 0.8) are inaccessible by the method employed. Examination of the nanowhiskers by transmission electron microscopy, photoluminescence spectroscopy, electron energy loss spectroscopy, and annealing studies indicates that they possess compositionally modulated nanostructures. The observed compositional modulation consists of alternating comparatively Al-rich and Ga-rich AlxGa1-xAs domains with dimensions of 3-20 nm. The spontaneous phase separation, which occurs during growth, appears to be kinetically driven, and the resulting phase-separated nanostructures appear to be, therefore, metastable rather than stable. Spontaneous phase separation in AlxGa1-xAs, which strongly influences its photoemission behavior, is not well understood theoretically.

  DOI：

  10.1021/ja0025907
• 作为产物：
  描述：

  氢化镓 、 氢化铝 以 neat (no solvent) 为溶剂， 反应 60.0h， 生成 aluminum gallium
  参考文献：
  名称：

  在蓝宝石上的 Al x Ga 1-x N 外延层的激光分子束外延过程中，Al 掺入对生长温度的依赖性 (0001)

  摘要：

  摘要 我们报道了使用激光分子束外延技术在 c 面蓝宝石衬底上成功生长 AlxGa1−xN (0 ≤ x ≤ 0.25) 外延薄膜。已经系统地研究了生长温度对 Al 掺入的作用以及在 500-700°C 温度范围内生长的 AlxGa1-xN 外延层的结构、电子和光学特性。原子力显微镜分析表明，AlxGa1-xN 的晶粒尺寸随着生长温度的增加而增加，并且在 ≥ 600 °C 时获得平坦的表面外延层。通过高分辨率 X 射线衍射、X 射线照片电子显微镜和光致发光研究证实了铝的掺入。据观察，生长温度在确定 Al 成分方面起着关键作用，随着生长温度的升高而增加。

  DOI：

  10.1016/j.jallcom.2017.12.220

文献信息

• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Al: MVol.A2, 28, page 336 - 338
  作者：

  DOI：——

  日期：——
• Phase Separation in Al<i>_x</i>Ga_1-<i>_x</i>As Nanowhiskers Grown by the Solution−Liquid−Solid Mechanism
  作者：Paul D. Markowitz、Michael P. Zach、Patrick C. Gibbons、R. M. Penner、William E. Buhro

  DOI：10.1021/ja0025907

  日期：2001.5.1

  Low-temperature growth of AlxGa1-xAs by the solution - liquid-solid mechanism affords nanowhiskers having two specific overall compositions: x = 0.1 and 0.8. Intermediate compositions (0.1 < x < 0.8) are inaccessible by the method employed. Examination of the nanowhiskers by transmission electron microscopy, photoluminescence spectroscopy, electron energy loss spectroscopy, and annealing studies indicates that they possess compositionally modulated nanostructures. The observed compositional modulation consists of alternating comparatively Al-rich and Ga-rich AlxGa1-xAs domains with dimensions of 3-20 nm. The spontaneous phase separation, which occurs during growth, appears to be kinetically driven, and the resulting phase-separated nanostructures appear to be, therefore, metastable rather than stable. Spontaneous phase separation in AlxGa1-xAs, which strongly influences its photoemission behavior, is not well understood theoretically.
• Puschin, N. A.; Stepanovic, S.; Stajic, V., Zeitschrift fur anorganische Chemie, 1933, vol. 216, p. 26 - 26
  作者：Puschin, N. A.、Stepanovic, S.、Stajic, V.

  DOI：——

  日期：——
• Puschin, N. A.; Stajic, V., 1933, vol. 4, p. 129 - 129
  作者：Puschin, N. A.、Stajic, V.

  DOI：——

  日期：——
• Puschin, N. A.; Stepanovic, S.; Stajic, V., Zeitschrift fur anorganische Chemie, 1932, vol. 209, p. 330 - 333
  作者：Puschin, N. A.、Stepanovic, S.、Stajic, V.

  DOI：——

  日期：——