Band engineering in Al-TM (TM=Rh, Ir) quasicrystalline approximants via alloying and enhancement of thermoelectric properties
作者:Yutaka Iwasaki、Koichi Kitahara、Kaoru Kimura
DOI:10.1016/j.jallcom.2020.156904
日期:2021.1
The binary Al-Ir 1/0 quasicrystalline approximant is predicted to be a narrow band gap semiconductor with a large Seebeck coefficient; however, it has not yet been realized practically because the presence of Al vacancies causes excess hole doping, which results in a small Seebeck coefficient. Here, we synthesized and measured the true density, lattice constant, and thermoelectric properties of Al-(Rh,Ir) quasicrystalline approximants with a series of Al-73(.3)(RhxIr1-x)(26.7) (x = 0, 0.25, 0.5, 0.75,1.0) compositions. The number of atoms per unit cell calculated using the true density, nominal composition, and lattice parameter increased with increasing Rh content x. The compositional dependence of the Seebeck co-efficient and dimensionless figure of merit zT showed a maximum value at x = 0.25, 850 K. The results indicated that Rh doping could effectively suppress Al vacancies, and the width of the band gap decreased with increasing x. In other word, a trade-off was observed between the amount of Al vacancies and the width of the band gap between the Al-Ir and Al-Rh 1/0 quasicrystalline approximants. (C) 2020 Elsevier B.V. All rights reserved.