gallium arsenate

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 后过渡金属氧阴离子化合物
• 英文名称: gallium arsenate
• 英文别名: Gallium;arsorate
• 化学式: AsO₄*Ga
• 分子量: 208.642
• InChiKey: CVVXBJCIMKQNLD-UHFFFAOYSA-K

计算性质

• 辛醇/水分配系数(LogP)：
  -1.09
• 重原子数：
  6
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  44.8
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  gallium arsenate 在 硫酸 作用下， 以 硫酸 为溶剂， 生成 氢化镓 、 hydrogen arsenate
  参考文献：
  名称：

  Goiffon, A.; Bouchikhi, A. El; Jumas, J. C., European Journal of Solid State and Inorganic Chemistry

  摘要：

  DOI：
• 作为产物：
  描述：

  gallium(III) oxide 、 砷酸、原砷酸 以 水 为溶剂， 生成 gallium arsenate
  参考文献：
  名称：

  Goiffon, A.; Bouchikhi, A. El; Jumas, J. C., European Journal of Solid State and Inorganic Chemistry

  摘要：

  DOI：

文献信息

• Gallium fluoroarsenates
  作者：Kayleigh L. Marshall、Jennifer A. Armstrong、Mark T. Weller

  DOI：10.1039/c5dt01094b

  日期：——

  Gallium fluoroarsenates, templated with simple metal or complex organic cations, form structures derived from octahedrally coordinated gallium and AsO₄ tetrahedra, and displaying various polyhedra-linking dimensionalities.

  氟砷酸镓以简单的金属或复杂的有机阳离子为模板，形成由八面体配位的镓和氧化砷四面体衍生的结构，并显示出各种多面体连接维度。
• Thermogravimetric study of GaAs chlorination between −30 and 900°C
  作者：Fernando M. Tunez、Jorge A. Gonzalez、María del C. Ruiz

  DOI：10.1016/j.tca.2011.05.012

  日期：2011.8

  Gallium (as GaAs) is at present an essential part of electronic devices, and the recovery of this element from electronic wastes is fundamental for the metallurgic industry. In this work, with the aim of recovering Ga by chlorination, the following reaction was investigated:GaAs(s) + 3Cl(2)(g) -> GaCl3(s, g, l) + AsCl3(s, g, l)A thermogravimetric study of the previous reaction was carried out, and the following variables were investigated: chlorine partial pressure, in the range between 0.2 and 1 atm, by dilution with N-2 and reaction temperature in the -29 degrees C to 900 degrees C interval. The thermodynamic calculations predicted that the reaction was feasible during the entire analyzed temperature range, and the experimental results were in agreement with the thermodynamic estimations. The results showed that the chlorination rate did not change significantly with temperature, but it increased with the chlorine partial pressure. It was found that AsCl3 was partially evaporated at temperatures above 20 degrees C, while the GaCl3 started evaporating at 100 degrees C. The experimental observations showed that the mechanism originating the reaction was different in each temperature range ranging between -30 and 160 degrees C, 200-400 degrees C, and above 500 degrees C. In the first case the reaction was caused by adsorption of Cl-2 on the solid surface. In the second case, the solid started reacting when little quantities of GaCl3 and AsCl3 vapor were injected in the entrance of the system, indicating that the chlorination kinetics responded to an autocatalytic mechanism. Above 500 degrees C, the reaction was caused without adding chlorination products. The results of the analysis by scanning electron microscopy and X-ray diffraction showed a preferential attack on one of the crystal planes of GaAs. Besides, the formation of Ga2O3 and GaAsO4 was observed as a consequence of the presence of small quantities of oxygen accompanying Cl-2.The results showed that chlorination is a selective and economic methodology for the recovery of gallium from electronic wastes. (C) 2011 Elsevier B.V. All rights reserved.
• Goiffon, A.; Bouchikhi, A. El; Jumas, J. C., European Journal of Solid State and Inorganic Chemistry
  作者：Goiffon, A.、Bouchikhi, A. El、Jumas, J. C.、Avinens, C.、Maurin, M.、Philippot, E.

  DOI：——

  日期：——
• Vibrational Origin of the Thermal Stability in the High-Performance Piezoelectric Material GaAsO₄
  作者：O. Cambon、G. M. Bhalerao、D. Bourgogne、J. Haines、P. Hermet、D. A. Keen、M. G. Tucker

  DOI：10.1021/ja202427x

  日期：2011.5.25

  Theoretical calculations and experiments show the absence of libration modes of the tetrahedra in GaAsO4, the most a-quartz-type distorted material. In consequence, the degree of dynamic disorder at high temperature is very low, making GaAsO4 of high interest for high-temperature applications. This paper shows the importance of the theoretical calculations of vibration in oxide materials. In this way, it could be possible to extend this result to other materials and predict the thermal stability of the materials and their potential applications at high temperature.
• Kosten, Klaus; Arnold, Heinrich, Zeitschrift fur Kristallographie
  作者：Kosten, Klaus、Arnold, Heinrich

  DOI：——

  日期：——