Effects of Ga-doping on the microstructure and magnetic properties of MnBi alloys
作者:Yang Yang、Jong-Woo Kim、Ping-Zhan Si、Hui-Dong Qian、Yongho Shin、Xinyou Wang、Jihoon Park、Oi Lun Li、Qiong Wu、Hongliang Ge、Chul-Jin Choi
DOI:10.1016/j.jallcom.2018.07.311
日期:2018.11
temperature phase Mn55Bi45-xGax (x = 0, 1, 3, 5, and 10) alloys were prepared by induction melting process with subsequent low temperature annealing. The effects of Ga-doping on the crystal structure and magnetic properties of the alloys were systematically studied. The room temperature coercivities of Mn55Bi45-xGax after ball milling increased from 1.43 T for x = 0 to 1.66 T for x = 5, while the saturation
摘要 低温相Mn55Bi45-xGax (x = 0, 1, 3, 5, 10)合金是通过感应熔炼工艺和随后的低温退火制备的。系统研究了Ga掺杂对合金晶体结构和磁性能的影响。球磨后 Mn55Bi45-xGax 的室温矫顽力从 x = 0 的 1.43 T 增加到 x = 5 的 1.66 T,而饱和磁化强度从 60.7 Am2/kg (x = 0) 降至 45.1 Am2/kg (x = 5)。Mn55Bi44Ga粉末的最大能积(BH)max达到7.87 MGOe。随着 Ga 浓度在 0 ≤ x ≤ 5 的范围内增加,Mn55Bi45-xGax 合金的居里温度从 633 K 增加到 658 K。