tantalum ditelluride

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: tantalum ditelluride
• 化学式: TaTe₂
• 分子量: 436.148
• InChiKey: OUZVZNXTCSVUPF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.83
• 重原子数：
  3.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  iridium ditelluride 、 tantalum ditelluride 生成 tantalum iridium tetratelluride
  参考文献：
  名称：

  WTe2 及其三元变体 TaIrTe4 和 NbIrTe4 中的金属-金属与碲-碲键合

  摘要：

  新的三元过渡金属碲化物 TaIrTe{sub 4} 和 NbIrTe{sub 4} 是 WTe{sub 2} 结构的有序变体，这又是基于 CdI{sub 2} 型层状结构的畸变。WTe{sub 2} 中的层由扭曲的 Te 原子片组成，金属原子位于扭曲的八面体位置。通过单晶X射线衍射方法，TaIrTe{sub 4}的结构已经确定，WTe{sub 2}的结构已经重新确定。化合物TaIrTe{sub 4}和WTe{sub 2}属于正交晶系的空间群C{sup 7}{sub 2{nu}}-Pmn2{sub 1}，在尺寸a = 3.770 (1)、b = 12.421 (6) 和 c = 13.184 (6) {埃} 和 a = 3.477 (2)、b = 6.249 (4) 和 c = 14.018 (9) {埃}，分别在113K。虽然金属-金属键合是所有三种化合物共有的结构特征，但仅在三元化合物中观察到

  DOI：

  10.1021/ja00049a029
• 作为产物：
  描述：

  碲化氢 、 五氯化钽 在 sodium tetrahydroborate 作用下， 以 乙二醇 为溶剂， 反应 0.03h， 生成 tantalum ditelluride
  参考文献：
  名称：

  Microwave‐Assisted Synthesis of Few‐Layered TaTe ₂ and Its Application as Supercapacitor

  摘要：

  AbstractWe report a simple and rapid microwave‐assisted synthesis of tantalum telluride (TaTe2) nanosheets. The ratio of tantalum pentachloride (TaCl5) and elemental tellurium (Te) powder were adjusted in the presence of NaBH4 in such a way as to obtain the TaTe2 nanosheet. The samples were characterized by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), UV/Vis spectroscopy, photoluminescence (PL) spectroscopy, and XRD. Our SEM, TEM, and AFM results show the formation of sheet‐like morphology, while the XRD data confirms the high crystalline quality and stable phase of the TaTe2 formed. The supercapacitor cells were fabricated by using TaTe2 nanosheets as anode material, platinum metal wire as a counterelectrode, and Ag/AgCl as reference electrode. The calculated coulombic efficiency is more than 95 %, while the cycle‐to‐cycle decrease in capacity is less than 5 %. The maximum discharge or charging capacity is below 2.4 W h/kg, which is an ideal characteristic for achieving supercapacitor behavior.

  DOI：

  10.1002/ejic.201403220

文献信息

• Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique
  作者：Dmitriy A. Chareev、Polina Evstigneeva、Dibya Phuyal、Gabriel J. Man、Håkan Rensmo、Alexander N. Vasiliev、Mahmoud Abdel-Hafiez

  DOI：10.1021/acs.cgd.0c00980

  日期：2020.10.7

  Due to their physical properties and potential applications in energy conversion and storage, transition-metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Among this class of materials, TMDs based on molybdenum, tungsten, sulfur, and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high-quality crystals of transition-metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth-metal polychalcogenides and NbS2 crystals using the aforementioned process. Most of the crystals obtained have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state of the art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ≈ 200 and 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals and yield state of the art measurements.

  由于其物理特性和在能量转换与储存方面的潜在应用，过渡金属二硫属化物（TMDs）近年来引起了广泛关注。在这一类材料中，基于钼、钨、硫和硒的TMDs因其半导体特性和自下而上合成技术的可获得性而特别具有吸引力。本文报告了一种方法，通过从金属饱和硫属熔体中蒸发沉积，从其固溶体中得到高质量的过渡金属二硒化物和二碲化物（PtTe2、PdTe2、NiTe2、TaTe2、TiTe2、RuTe2、PtSe2、PdSe2、NbSe2、TiSe2、VSe2、ReSe2）晶体。此外，我们还展示了利用上述工艺合成稀土金属多硫属化物和NbS2晶体的方法。所获得的大多数晶体具有层状CdI2结构。我们研究了选定晶体的物理性质，并与文献中报道的最先进研究成果进行了比较。值得注意的是，在1T-TiSe2和2H-NbSe2晶体中，电荷密度波转变在TCDW分别约为200K和33K时很好地定义。角分辨光电子能谱和电子衍射被用于直接获取PtTe2单晶的电子和晶体结构，并提供了最先进的测量结果。
• Solid-state tellurium-125 nuclear magnetic resonance studies of transition-metal ditellurides †
  作者：Isabelle Orion、João Rocha、Stéphane Jobic、Virginie Abadie、Raymond Brec、Christian Fernandez、Jean-Paul Amoureux

  DOI：10.1039/a704757f

  日期：——

  Solid-state 125Te NMR studies of inorganic compounds containing tellurium in oxidations states ranging from –II to VI have been made. The chemical shift tensors of Te(OH)6, TeCl4, TeO2 and elemental tellurium have been determined by simulation of magic angle spinning (MAS) NMR spectra. Binary transition-metal ditellurides have been studied by MAS and static 125Te NMR techniques. The observed MTe2 NMR shifts range from ca. 500 to 8000 ppm [from aqueous Te(OH)6] and are shown to be correlated with the expected tellurium oxidation state. Separation of the chemical shift and Knight shift contributions has been attempted.

  固态125Te NMR研究了氧化态从–II到VI的含碲无机化合物。通过模拟魔角旋转（MAS）NMR谱图，确定了Te(OH)6、TeCl4、TeO2和元素碲的化学位移张量。通过MAS和静态125Te NMR技术研究了二元过渡金属二碲化物。观察到的MTe2 NMR位移范围大约从500到8000 ppm（来自水相Te(OH)6），并且显示出与预期的碲氧化态相关。尝试分离化学位移和奈特位移的贡献。
• 125Te Mössbauer spectroscopic study of layered transition metal ditellurides with interlayer communication
  作者：R. Guzmán、J. Morales、J.L. Tirado、M.L. Elidrissi Moubtassim、J.C. Jumas、G. Langouche

  DOI：10.1016/0038-1098(95)00483-1

  日期：1995.12

  Abstract The 125 Te Mossbauer spectroscopy of different 1T-transition metal ditellurides shows that the values of the isomer shift are dependent on the degree of the TeTe interlayer interactions which decrease the 5 p population by Te( p )-M( d ) electron donation. The quadrupole splitting values are consistent with the departure from the ideal 1T-structure. For 2HMoTe 2 , the Mossbauer parameters are

  摘要 不同 1T-过渡金属二碲化物的 125 Te Mossbauer 光谱表明，异构体位移的值取决于 TeTe 层间相互作用的程度，该相互作用通过 Te( p )-M( d ) 电子减少 5 p 布居。捐款。四极分裂值与理想 1T 结构的偏离一致。对于 2HMoTe 2 ，Mossbauer 参数受钼原子环境畸变的影响，该畸变是由该固体颗粒中的大量层弯曲引起的。
• Cytotoxicity of Group 5 Transition Metal Ditellurides (MTe₂; M=V, Nb, Ta)
  作者：Hui Ling Chia、Naziah Mohamad Latiff、Zdenĕk Sofer、Martin Pumera

  DOI：10.1002/chem.201704316

  日期：2018.1.2

  Much research effort has been put in to study layered compounds with transition metal dichalcogenides (TMDs) being one of the most studied compounds. Due to their extraordinary properties such as excellent electrochemical properties, tuneable band gaps, and low shear resistance due to weak van der Waals interactions between layers, TMDs have been found to have wide applications such as electrocatalysts

  已经投入了大量的研究努力来研究层状化合物，其中过渡金属二卤化二异氰酸酯（TMD）是研究最多的化合物之一。由于其非凡的性能，例如出色的电化学性能，可调节的带隙以及由于层之间的弱范德华相互作用而导致的低剪切阻力，TMD被发现具有广泛的应用，例如用于析氢反应的电催化剂，超级电容器，生物传感器，领域效果晶体管（FET），光伏电池和润滑剂添加剂。在最近几年中，第5组过渡金属二碲化物受到了巨大的研究关注。然而，迄今为止，人们对这些材料带来的潜在毒性知之甚少。因此，2 ; M ＝ V，Nb，Ta）与人肺癌上皮A549细胞一起24小时，并测量治疗后的剩余细胞活力。我们的发现表明VTe 2具有剧毒，而NbTe 2和TaTe 2被认为具有中等毒性。这项研究是迈向了解第5组过渡金属二碲化物毒性作用的示例性第一步，以准备将来可能的商业化。
• Die metallreiche Schichtstruktur von Ta6STe3
  作者：S. Debus、B. Harbrecht

  DOI：10.1002/(sici)1521-3749(200001)626:1<173::aid-zaac173>3.0.co;2-g

  日期：2000.1

  bis sechs Metallatomen umgeben sind. Ta6STe3 ist ein masiger metallischer Leiter (ρ293 K = 3 × 10–4 Ωcm) mit den dafur typischen, temperaturunabhangigen paramagnetischen Eigenschaften. The Metal-rich Layer Structure of Ta6STe3 Ta6S1+xTe3–x was prepared from an appropriate mixture of 2 H–Ta1.3S2, TaTe2, and Ta in a fused tantalum tube at 1273 K within 3 d. The results of a X-ray single crystal structure

  Die Verbindung Ta6S1+xTe3–x ist durch Umsetzung eines entsprechenden Gemenges aus 2 H–Ta1.3S2, TaTe2 und Tantal in gasdicht verschweisten Tantaltiegeln bei 1273 K zuganglich。Die Ergebnisse der Einkristall-Rontgenstrukturanalysis einer Phase nahe der Tellurreichen Grenze des Homogenitatsgebiets werden mitgeteilt。Ta6S1.00Te3.00(1) kristallisiert triklin, Raumgruppe P1, a = 993.14(8) pm, b = 1032.18(8)