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europium monotelluride

中文名称
——
中文别名
——
英文名称
europium monotelluride
英文别名
europium telluride
europium monotelluride化学式
CAS
——
化学式
EuTe
mdl
——
分子量
279.56
InChiKey
MZYIQEHXFNBNEE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -0.92
  • 重原子数:
    2.0
  • 可旋转键数:
    0.0
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    0.0
  • 氢给体数:
    0.0
  • 氢受体数:
    0.0

反应信息

  • 作为反应物:
    描述:
    europium monotelluride 、 europium selenide 以 neat (no solvent) 为溶剂, 生成
    参考文献:
    名称:
    NMR Study of Hyperfine Field at 153Eu in EuSe1-xTex with x ≤0.1
    摘要:
    DOI:
    10.1143/jpsj.50.1499
  • 作为产物:
    描述:
    氢化铕tellurium 以 neat (no solvent) 为溶剂, 生成 europium monotelluride
    参考文献:
    名称:
    Vel`mizov, S. I.; Gartman, V. K.; Klinkova, L. A., Inorganic Materials, 1983, vol. 19, p. 25 - 29
    摘要:
    DOI:
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文献信息

  • Giant effective g-factor in PbxEu1−xTe epitaxial films
    作者:E. Heredia、P. H. de Oliveira Rappl、P. Motisuke、A. L. Gazoto、F. Iikawa、M. J. S. P. Brasil
    DOI:10.1063/1.2961018
    日期:2008.7.21
    We investigated PbxEu1−xTe films with x⩽0.2 by magneto-optical measurements. For x∼0.01, the optical emission is similar to high quality EuTe films with two narrow lines attributed to excitonic recombinations associated with magnetic polarons. For increasing x, the emission becomes dominated by a broader lower energy band, which is very efficient as compared to the binary emission. The magneto-optical
    我们通过磁光测量研究了具有 x⩽0.2 的 PbxEu1−xTe 薄膜。对于 x∼0.01,光发射类似于高质量 EuTe 薄膜,具有两条窄线,归因于与磁极化子相关的激子复合。随着 x 的增加,发射变得由更宽的低能带主导,与二元发射相比,这是非常有效的。三元薄膜的磁光特性显示出与 EuTe 结果的各种相似之处,例如在相似的温度和磁场下猝灭。最引人注目的是,它们还提供了一个巨大的有效 g 因子,使这种材料成为自旋电子应用的有力候选者。
  • Substrate dependent properties of electrodeposited EuTe thin films
    作者:N.S. Gaikwad、V.M. Nikale、C.H. Bhosale
    DOI:10.1016/s0022-3697(02)00206-8
    日期:2003.5
    Abstract In electrodeposition, substrate besides providing mechanical support to the electrodeposit, affects significantly the structural and morphological properties of a film. Electrodeposition and characterization of EuTe thin films onto different substrates such as stainless steel (SS), titanium (Ti), copper (Cu), fluorine-doped tin oxide (F:SnO 2 ) covered glasses have been described. The deposition
    摘要 在电沉积中,基材除了为电沉积提供机械支撑外,还显着影响薄膜的结构和形态特性。已经描述了 EuTe 薄膜在不同基材上的电沉积和表征,例如不锈钢 (SS)、 (Ti)、 (Cu)、掺氧化 (F:SnO 2 ) 覆盖的玻璃。沉积电位已从极化曲线估计。提出了形成 EuTe 电沉积物的反应机制。研究了沉积电位、电流密度和沉积时间等制备参数。这些薄膜已通过 X 射线衍射、扫描电子显微镜 (SEM)、原子力显微镜 (AFM) 和 X 射线能量色散分析 (EDAX) 技术进行表征。电沉积的 EuTe 薄膜在所有基板上都是多晶的,具有相同的立方晶体结构。SEM 研究表明,所研究的基材的表面形态不同。然而,在SEM显微照片中没有观察到裂纹。AFM 图像显示大的球形晶粒支持样品的多晶性质。EDAX 分析表明 EuTe 薄膜接近化学计量,略富含
  • Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Te: MVol., 66, page 236 - 238
    作者:
    DOI:——
    日期:——
  • Cs2Gd6N2Te7: The first quaternary nitride telluride of the lanthanides
    作者:Falk Lissner、Thomas Schleid
    DOI:10.1016/j.jallcom.2005.08.105
    日期:2006.7
    The first quaternary nitride telluride with trivalent gadolinium, Cs2Gd6N2Te7, was obtained by the reaction of metallic gadolinium, with cesium azide, elemental tellurium, and gadolinium trichloride as well as cesium chloride as flux at 900 degrees C for 7 days in evacuated silica tubes. Single crystals occur as long black needles and crystallize in the monoclinic space group C2/m (a=2403.1(2)pm, b=424.03(3)pm, c = 1142.91(7) pm, beta = 103.709(4)degrees, Z = 2). Three crystallographically different Gd3+ cations constitute the structure, two are coordinated by one N3- (d(Gd(1/2)-N) = 217 pm) and five Te2- anions (d(Gd(1/2)-Te) = 305-326 pm), and the third Gd3+ by two N3- (d(Gd(3)-N) = 244 pm) and four Te2- anions (d(Gd(3)-Te)=316-317pm), all forming distorted octahedra about Gd3+. The Cs+ cation shows a perfect bicapped trigonal prism (C.N. = 8, d(Cs-Te) = 383-431 pm) as coordination sphere. Two of these polyhedra are condensed via a common (non-capped) rectangular face building up double prisms [Cs2Te12](22-). Further linkage via triangular faces (along [010]) and two of the four caps (along [001]) results in corrugated layers [Cs2Te7](12-) running parallel to (100). However, the main feature of the crystal structure comprises N3--centered (Gd3+)(4) tetrahedra (d(N-Gd) = 217 pm (2x) and 244pm (2x); measured angle(Gd-N-Gd) = 107 degrees (2 + 2 + 1 x) and 121 degrees (1 x)), which are connected via two vertices each to buildup one-dimensional infinite chains(infinity)(1) [N(Gd1)(1/1)(t)(Gd2)(1/1)(t)(Gd3)(2/2)(v)](6+)} (t = terminal, v = vertex-shared) along [0 10] like in the structure of the M(3)NCh(3)-type nitride chalcogenides with M = La-Nd, Sm, Gd-Dy, and Ch = S, Se. (c) 2005 Elsevier B.V. All rights reserved.
  • Specific heats of EuTe and EuSe near their magnetic transitions
    作者:W. R. Johanson、D. C. McCollum
    DOI:10.1103/physrevb.22.2435
    日期:——
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