氯二硅烷 | 14565-98-1

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 类金属盐
• 中文名称: 氯二硅烷
• 英文名称: monochlorodisilane
• 英文别名: disilane chloride；disilyl chloride；chlorodisilane；chloro(silyl)silane
• CAS: 14565-98-1
• 化学式: ClH₅Si₂
• 分子量: 96.6637
• InChiKey: FXMNVBZEWMANSQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.41
• 重原子数：
  3
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  氯二硅烷 、 二异丙胺 在 正己烷 作用下， 以 正己烷 为溶剂， 反应 2.0h， 生成 diisopropylaminodisilane
  参考文献：
  名称：

  METHODS FOR DEPOSITING FILMS WITH ORGANOAMINODISILANE PRECURSORS

  摘要：

  本文描述了形成含硅薄膜的前体和方法。在一个方面，提供了式I的前体：其中R1选自线性或支链C3到C10烷基，线性或支链C3到C10烯基，线性或支链C3到C10炔基，C1到C6二烷基氨基，电子吸引基团和C6到C10芳基；R2选自氢，线性或支链C1到C10烷基，线性或支链C3到C6烯基，线性或支链C3到C6炔基，C1到C6二烷基氨基，C6到C10芳基，线性或支链C1到C6氟代烷基，电子吸引基团和C4到C10芳基；可选地，R1和R2通过形成取代或未取代芳环或取代或未取代脂环的环结合在一起；n=1或2。

  公开号：

  US20160203975A1
• 作为产物：
  描述：

  乙硅烷 、 三氯化硼 以 neat (no solvent) 为溶剂， 生成 氯二硅烷
  参考文献：
  名称：

  Infrared and Raman spectra and normal coordinate analysis of disilylchloride

  摘要：

  Disilylchloride has been synthesized by chlorination of disilane with boron trichloride. FTIR spectra have been obtained of the vapour phase and Raman spectra of the liquid phase of this molecule. The spectra are fully assigned for the first time. A normal coordinate analysis is carried out and the refined force constants are compared to previous works on disilane, disilyliodide and silylchloride. The height of the potential energy barrier to internal rotation in disilylchloride is also evaluated.

  DOI：

  10.1016/0584-8539(91)80123-z
• 作为试剂：
  描述：

  二异丙胺 在 氯二硅烷 作用下， 以 正己烷 为溶剂， 反应 2.0h， 生成 diisopropylaminodisilane
  参考文献：
  名称：

  TW2017/13671

  摘要：

  公开号：

文献信息

• Kinetics of the reactions of HSiCl with SiH4 and SiH2Cl2
  作者：Pauline Ho、William G. Breiland、Robert W. Carr

  DOI：10.1016/0009-2614(86)80639-x

  日期：1986.12

  Laser-excited fluorescence detection of HSiCl was used to measure the room-temperature kinetics of the reactions of HSiCl with SiH4 and SiCl2H2. An upper bound was also obtained for the HSiCl + H2 rate coefficient. Rate coefficients for insertion of HSiCl into SiH4 and SiCl2H2 are 3–4 orders of magnitude smaller than rate coefficients for insertion of SiH2 into Si-H bonds.

  HSiCl的激光激发荧光检测用于测量HSiCl与SiH 4和SiCl 2 H 2的反应的室温动力学。还获得了HSiCl + H 2速率系数的上限。将HSiCl插入SiH 4和SiCl 2 H 2的速率系数比将SiH 2插入Si-H键的速率系数小3-4个数量级。
• Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：US20150024608A1

  公开（公告）日：2015-01-22

  Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

  本文描述了形成含硅薄膜的前体和方法。在其中一个方面，提供了式I的前体：其中，R1选自线性或支链的C3到C10烷基，线性或支链的C3到C10烯基，线性或支链的C3到C10炔基，C1到C6二烷基氨基，电子提取基团和C6到C10芳基；R2选自氢，线性或支链的C1到C10烷基，线性或支链的C3到C6烯基，线性或支链的C3到C6炔基，C1到C6二烷基氨基，C6到C10芳基，线性或支链的C1到C6氟代烷基，电子提取基团和C4到C10芳基；可选地，其中R1和R2连接在一起形成取代或未取代的芳香环或取代或未取代的脂环；n=1或2。
• ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：US20130323435A1

  公开（公告）日：2013-12-05

  Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

  本文介绍了用于形成含硅薄膜的前体和方法。在一个方面，提供了式I的前体：其中R1选自线性或支链的C3到C10烷基，线性或支链的C3到C10烯基，线性或支链的C3到C10炔基，C1到C6二烷基胺基，电子吸引基团和C6到C10芳基；R2选自氢，线性或支链的C1到C10烷基，线性或支链的C3到C6烯基，线性或支链的C3到C6炔基，C1到C6二烷基胺基，C6到C10芳基，线性或支链的C1到C6氟代烷基，电子吸引基团和C4到C10芳基；可选地，其中R1和R2连接在一起形成选自取代或未取代的芳香环或取代或未取代的脂环的环；n = 1或2。
• Methods for depositing films with organoaminodisilane precursors
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：US09337018B2

  公开（公告）日：2016-05-10

  A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.

  一种在基板至少一个表面上形成含硅薄膜的方法，该方法通过选择化学气相沉积过程和原子层沉积过程中的一种沉积过程来实现，包括以下步骤：将基板的至少一个表面放置于反应室中；将至少一种含有Si-N键、Si-Si键和Si-H3基的有机氨基二硅烷前体引入反应室，所述Si-H3基由以下式I表示：其中R1和R2在此定义；并将含氮源引入反应器中，其中所述至少一种有机氨基二硅烷前体和含氮源反应，形成所述至少一个表面上的薄膜。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Si: MVol.B, 210, page 582 - 585
  作者：

  DOI：——

  日期：——

表征谱图