Electric discharge reactions of silane and germane with some volatile group VI species
作者:J. E. Drake、C. Riddle
DOI:10.1039/j19700003134
日期:——
discharge on equimolar mixtures of the following hydrides: SiH4/H2S, SiH4/H2Se, GeH4/H2S, GeH4/H2Se, SiH4/GeH4/H2S, SiH4/GeH4/H2Se, SiH4/MeSH, and GeH4/MeSH, has been investigated. Analysis of the reaction products by 1H n.m.r. and mass spectroscopy indicates the formation of the previously known mixed and ternary hydrides: SiH3SH, (SiH3)2S, SiH3SeH, (SiH3)2Se, GeH3SH, (GeH3)2S, GeH3SeH, (GeH3)2Se,
Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
作者:G. Grzybowski、R. T. Beeler、L. Jiang、D. J. Smith、J. Kouvetakis、J. Menéndez
DOI:10.1063/1.4745770
日期:2012.8.13
the epitaxial synthesis of Ge1−ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional Ge2H6/SnD4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge1−ySny layers with Sn concentrations up to at least
Synthesis, Decomposition, and Structural Studies in the Gas Phase and Solid State of <i>N,N</i>-Dimethylaminoxygermane
作者:Norbert W. Mitzel、Udo Losehand、Sarah L. Hinchley、David W. H. Rankin
DOI:10.1021/ic0007409
日期:2001.2.1
Ge2H6-->Ge3H8 + HONMe2, which is predicted slightly exothermic by 14 kJ mol-1. The molecularstructure of H3GeONMe2 was determined by gas-phaseelectrondiffraction supported by an ab initio geometry [MP2/6-311G(d,p)] and a force field [MP2/6-31G(d)]. The structure of the compound in the crystal lattice was determined by low-temperature crystallography using a single crystal of H3GeONMe2 grown in situ