disilyl radical | 73151-72-1

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: disilyl radical
• 英文别名: disilyl；Disilanyl
• CAS: 73151-72-1
• 化学式: H₅Si₂
• 分子量: 61.2107
• InChiKey: PDULIKUVYCXPGX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.1
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  disilyl radical 生成 乙硅烷
  参考文献：
  名称：

  Ballestri Marco, Chatgilialoglu Chryssostomos, Guerra Maurizio, Guerrini +, J. Chem. Soc. Perkin Trans. 2, (1993) N 3, S 421-425

  摘要：

  DOI：
• 作为产物：
  描述：

  乙硅烷 在 F 作用下， 以 neat (no solvent) 为溶剂， 生成 disilyl radical
  参考文献：
  名称：

  Photoionization mass spectrometric studies of the transient species Si₂H_n (n=2–5)

  摘要：

  The transient species Si2H5, Si2H4, Si2H3, and Si2H2 have been prepared for the first time, by reactions of F atoms with Si2H6. The species are generated in situ and studied by photoionization mass spectrometry. The adiabatic ionization potentials are (in eV) Si2H5, 7.60±0.05; Si2H4, 8.09±0.03; Si2H3, <7.59; and Si2H2, 8.20+0.01−0.02. In addition, two fragment appearance potential curves were measured, Si2H+3 (Si2H5) and Si2H+2 (Si2H4). By combining these ionization potentials with appearance potentials obtained here and from Si2H6, the following heats of formation (kcal/mol at 0 K) have been inferred: Si2H5, <63.3 (59.2); Si2H4, 67.9±0.9; Si2H3 (∼96); Si2H2, <100.7 (90.2–95.6). The quantities in parentheses are probable values, but less well defined. Structures and structural changes resulting from photoionization are discussed. In particular, Si2H2 and its cation are very likely cyclic (doubly bridged). Heats of formation of cations are also obtained, from which the proton affinities of Si2H2 (199±3 kcal/mol) and Si2H4 (199.9 kcal/mol) are deduced. The structural and energetic differences between corresponding silicon and carbon hydrides are discussed in detail.

  DOI：

  10.1063/1.460947

文献信息

• Absolute rate constants for the reaction of SiH with hydrogen, deuterium and silane
  作者：M.H. Begemann、R.W. Dreyfus、J.M. Jasinski

  DOI：10.1016/0009-2614(89)87168-4

  日期：1989.3

  photolysis and its concentration monitored in real time by laser-induced fluorescence. Removal rates for SiH by hydrogen, deuterium and silane have been determined at 5 Torr total pressure in helium at ambient temperature. Silylidyne reacts gas-kinetically with silane, but considerably more slowly with hydrogen and deuterium.

  准分子激光闪光光解产生了Silylidyne（SiH），并通过激光诱导的荧光实时监测其浓度。在环境温度下，在氦气中的总压力为5 Torr时，已确定了氢，氘和硅烷对SiH的去除速率。硅氢炔与硅烷发生气动力学反应，但与氢和氘的反应要慢得多。
• Gas-phase homolytic substitution reactions of hydrogen atoms at silicon centers
  作者：L. Fabry、P. Potzinger、B. Reimann、A. Ritter、H. P. Steenbergen

  DOI：10.1021/om00137a030

  日期：1986.6.1
• Direct kinetic studies of SiH₃+SiH₃, H, CCl₄, SiD₄, Si₂H₆, and C₃H₆by tunable infrared diode laser spectroscopy
  作者：S. K. Loh、J. M. Jasinski

  DOI：10.1063/1.461707

  日期：1991.10

  Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy. Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems. The silyl recombination reaction, SiH3+SiH3→Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities. Analysis yields a refinement of the rate constant, krc=(7.9±2.9)×10−11 cm3 molecule−1 s−1. By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H+SiH3 and H+SiH4 are determined to be (2±1)×10−11 and (2.5±0.5)×10−13 cm3 molecule−1 s−1, respectively. Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions. Derived upper limits to the rate constants show these reactions to be slow at room temperature. The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules. Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.