Chlorosilicon(1+) | 51311-81-0

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 类金属盐
• 英文名称: Chlorosilicon(1+)
• CAS: 51311-81-0
• 化学式: ClSi
• 分子量: 63.5385
• InChiKey: CFMKMSBGONFRNY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.31
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  盐酸 、 硅烷 以 gas 为溶剂， 生成 Chlorosilicon(1+)
  参考文献：
  名称：

  Selected ion flow drift tube studies of the reactions of Si⁺(²P) with HCl, H₂O, H₂S, and NH₃: Reactions which produce atomic hydrogen

  摘要：

  The reaction rate coefficients, k, for the reactions of ground-state Si+(2P) with HCl, H2O, H2S, and NH3, have been measured as a function of reactant ion/reactant neutral center-of-mass kinetic energy, KECM, in a selected ion flow drift tube (SIFDT) apparatus, operated with helium at a temperature 298±2 K. The values k of the studied reactions have very pronounced, negative energy dependencies; the rate coefficients decrease by about 1 order of magnitude as KECM increase from near thermal values to ∼2 eV. The results are interpreted in terms of a simple model assuming the reactions to proceed via the formation of long-lived complexes. These intermediate complexes decompose back to reactants or forward to products, the unimolecular decomposition rate coefficients for these reactions being k1 and k2, respectively. It is found that a power law of the form k−1/k2=const(KECM)m closely describes each reaction.

  DOI：

  10.1063/1.470375

文献信息

• Gas phase recombination of ionic molecules for ion-induced surface emission
  作者：W.L. O'Brien、T.N. Rhodin、L.C. Rathbun

  DOI：10.1016/0039-6028(88)90598-5

  日期：1988.1

  Abstract The gas phase recombination mechanism has been used to interpret ion-induced emission from TiSi 2 and MoSi 2 surfaces in the presence of Cl 2 . Direct time-of-flight measurements have been performed on Si + , SiCl + , Ti + and TiCl + emitted from TiSi 2 and on Si + , SiCl + , Mo + and MoCl + emitted from MoSi 2 . It was found that the ionic molecular products were formed by recombination above the

  摘要 气相复合机制已被用于解释在 Cl 2 存在下 TiSi 2 和 MoSi 2 表面的离子诱导发射。已经对从 TiSi 2 发出的 Si + 、SiCl + 、Ti + 和 TiCl + 以及从 MoSi 2 发出的 Si + 、SiCl + 、Mo + 和 MoCl + 进行了直接飞行时间测量。发现离子分子产物是通过在中性Cl原子和电离金属或半导体原子表面上方复合形成的。当考虑图像电位调整时，基于这种方法的理论计算与低至约 1 eV 的实验数据非常吻合。这占发射的离子分子产物的 90% 以上。重要的是，来自TiSi 2 和MoSi 2 的SiCl + 的发射是由与来自元素Si的中性SiCl的发射不同的机制引起的。