lambda~2~-Stannane--titanium (5/6) | 12166-63-1

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: lambda~2~-Stannane--titanium (5/6)
• 英文别名: λ2-stannane;titanium
• CAS: 12166-63-1
• 化学式: Sn₅Ti₆
• 分子量: 880.83
• InChiKey: LZUVZCXZDXHHLQ-UHFFFAOYSA-N

反应信息

• 作为产物：
  描述：

  tin 、 四氢化物钛 反应 720.0h， 生成 lambda~2~-Stannane--titanium (5/6)
  参考文献：
  名称：

  Ti-Ni-Sn和Ti-Ni-Sb三元体系中三元化合物的相平衡，形成，晶体和电子结构

  摘要：

  Ti-Ni-Sn和Ti-Ni-Sb三元体系的相平衡已通过X射线和EPM分析分别在1073 K和873 K的整个浓度范围内进行了研究。四三元金属间化合物TiNiSn（MgAgAs型），钛镍2- X的Sn（MnCu 2的Al型），的Ti 2的Ni 2 Sn的（U 2的Pt 2的Sn-型）和Ti 5 NISN 3（HF 5的CuSn 3 -型）在1073 K的形成在钛镍-锡系统的TiNi 2锡化锡的特征是均匀性在Ni的50-47 at％范围内。Ti-Ni-Sb三元体系在873 K时的特征是形成三种三元金属间化合物，即Ti 0.8 NiSb（MgAgAs型），Ti 5 Ni 0.45 Sb 2.55（W 5 Si 3型）和Ti 5 NiSb 3（Hf 5 CuSn 3型）。Ni在Ti 0.8 NiSb中的溶解度降低了Ti位点的空位数量，直至Ti 0.91 Ni 1.1 Sb组成。

  DOI：

  10.1016/j.jssc.2012.08.023

文献信息

• Phase transformations and phase equilibria in the Co–Sn–Ti system in the crystallization interval
  作者：Iu. Fartushna、M. Bulanova、R.M. Ayral、J.C. Tedenac、K. Meleshevich

  DOI：10.1016/j.jssc.2016.09.013

  日期：2016.12

  concentration interval studied. Taking into account our recent data, the liquidus projection is characterized by the fields of primary crystallization of (βTi), (Co), binary-based phases Ti 3 Sn, Ti 2 Sn, Ti 5 Sn 3 , Ti 6 Sn 5 , Ti 2 Co, TiCo, TiCo 2 (c), TiCo 2 (h), TiCo 3 , βCo 3 Sn 2 , CoSn and ternary τ1. The solidus projection is characterized by thirteen three-phase fields, which result from invariant

  摘要 采用扫描电子显微镜、微探针分析、差热分析、X射线衍射等方法对结晶区间（低于~50 at% Sn）的Co-Sn-Ti体系进行了研究。液相线和固相线投影和熔化图被构建。只有Co 2 TiSn(τ1) 三元化合物（Heusler 相-L1 2 ）在所研究的浓度区间内与液体处于平衡状态。考虑到我们最近的数据，液相线投影的特征在于（βTi），（Co），二元基相Ti 3 Sn，Ti 2 Sn，Ti 5 Sn 3 ，Ti 6 Sn 5 ，Ti的初级结晶场2 Co、TiCo、TiCo 2 (c)、TiCo 2 (h)、TiCo 3 、βCo 3 Sn 2 、CoSn 和三元τ1。固相线投影的特征是 13 个三相场，它们是由不变的四相平衡产生的，
• A Mössbauer effect and X-ray diffraction investigation of Ti–Sn intermetallic compounds: I. Equilibrium phases
  作者：J.W O’Brien、R.A Dunlap、J.R Dahn

  DOI：10.1016/s0925-8388(02)01304-x

  日期：2003.4

  Abstract A thorough X-ray diffraction and Mossbauer effect investigation of Ti3Sn, Ti2Sn, Ti5Sn3, Ti6Sn5, and Ti2Sn3 phases in the Ti–Sn binary system has been made. The compounds were verified to have the same crystal structures as those reported in the literature. This work presents the first reported 119Sn Mossbauer effect spectroscopy data on Ti3Sn, Ti2Sn, Ti5Sn3, and Ti6Sn5. The room temperature

  摘要 对 Ti-Sn 二元体系中的 Ti3Sn、Ti2Sn、Ti5Sn3、Ti6Sn5 和 Ti2Sn3 相进行了彻底的 X 射线衍射和穆斯堡尔效应研究。这些化合物经证实具有与文献中报道的相同的晶体结构。这项工作首次报道了关于 Ti3Sn、Ti2Sn、Ti5Sn3 和 Ti6Sn5 的 119Sn 穆斯堡尔效应光谱数据。通过将模型光谱拟合到观测数据，已经确定了每个相的室温中心位移（相对于 CaSnO3）和四极分裂。这些结果对于解释锂离子电池高容量锡基电极材料的穆斯堡尔效应测量结果很重要。
• Neutron diffraction study on the Heusler compound Co1.50TiSn and its nitrogenation products
  作者：Tatsuhito Nobata、Go Nakamoto、Makio Kurisu、Yoshikazu Makihara、Kenji Ohoyama、Masayoshi Ohashi

  DOI：10.1016/s0925-8388(02)00402-4

  日期：2002.12

  diffraction studies have been performed for the Heusler compound ‘CoTiSn’ prepared from stoichiometric amounts of the constituent elements and its nitrogenation products. The Rietveld refinement indicates that the ‘CoTiSn’ sample consists of three phases: Co+Ti+Sn→0.69Co 1.50 TiSn+0.05Ti 6 Sn 5 +0.06Sn. It is concluded that the stoichiometric compound CoTiSn is not synthesized but that Co 1.50 TiSn with

  摘要 对由化学计量量的组成元素及其氮化产物制备的 Heusler 化合物“CoTiSn”进行了中子粉末衍射研究。Rietveld 细化表明“CoTiSn”样品由三相组成：Co+Ti+Sn→0.69Co 1.50 TiSn+0.05Ti 6 Sn 5 +0.06Sn。得出的结论是，没有合成化学计量化合物 CoTiSn，而是在具有 XYZ 构型的 MgAgAs 型结构中形成了具有半填充空位亚晶格的 Co 1.50 TiSn。氮吸收伴随着“CoTiSn”样品的歧化，根据以下方程：“CoTiSn”+0.23N 2 →0.50Co 1.92 TiSn+0.47TiN+0.36Sn+0.04CoSn 2 +0.03Co 1.50 TiSn。结果表明，氮原子选择性地与 Co 1 中的 Ti 原子反应。50 TiSn 和 Ti 6 Sn 5 化合物以及在氮化过程中发生 Co 原子对 Co 1.50 TiSn
• Standard enthalpies of formation of some 3d, 4d and 5d transition-metal stannides by direct synthesis calorimetry
  作者：S.V Meschel、O.J Kleppa

  DOI：10.1016/s0040-6031(97)00467-x

  日期：1998.4

  The standard enthalpies of formation of some 3d, 4d and 5d transition-metal stannides have been measured by high-temperature direct synthesis calorimetry at 1473+/-2 K. The following results are reported; all in kJ/mol of atoms: Ti(6)Sn(5): -(43.4+/-1.4); V(3)Sn: -(21.7+/-1.4); Zr(5)Sn(3): -(71.2+/-2.5); Nb(3)Sn: -(15.2+/-2.3); Ru(3)Sn(7): -(18.7+/-1.4); RhSn(2): -(42.1+/-2.4); Pd(3)Sn: -(57.8+/-1.9); Hf(5)Sn(3): -(49.2+/-2.1); Ir(5)Sn(7): -(15.0+/-1.9); IrSn(2): -(12.9+/-1.6); PtSn: -(58.8+/-2.3). The results are compared with some earlier values obtained by calorimetry or derived from emf or vapor-pressure measurements. They are also compared with predicted values from the semi-empirical model of Miedema et al., and with available enthalpies of formation for transition-metal germanides. (C) 1998 Elsevier Science B.V.
• Direct Observation of Inherent Atomic-Scale Defect Disorders responsible for High-Performance Ti₁₋ <i> _x </i> Hf<i> _x </i> NiSn₁₋ <i> _y </i> Sb<i> _y </i> Half-Heusler Thermoelectric Alloys
  作者：Ki Sung Kim、Young-Min Kim、Hyeona Mun、Jisoo Kim、Jucheol Park、Albina Y. Borisevich、Kyu Hyoung Lee、Sung Wng Kim

  DOI：10.1002/adma.201702091

  日期：2017.9

  Structural defects often dominate the electronic‐ and thermal‐transport properties of thermoelectric (TE) materials and are thus a central ingredient for improving their performance. However, understanding the relationship between TE performance and the disordered atomic defects that are generally inherent in nanostructured alloys remains a challenge. Herein, the use of scanning transmission electron microscopy to visualize atomic defects directly is described and disordered atomic‐scale defects are demonstrated to be responsible for the enhancement of TE performance in nanostructured Ti1−xHfxNiSn1−ySby half‐Heusler alloys. The disordered defects at all atomic sites induce a local composition fluctuation, effectively scattering phonons and improving the power factor. It is observed that the Ni interstitial and Ti,Hf/Sn antisite defects are collectively formed, leading to significant atomic disorder that causes the additional reduction of lattice thermal conductivity. The Ti1−xHfxNiSn1−ySby alloys containing inherent atomic‐scale defect disorders are produced in one hour by a newly developed process of temperature‐regulated rapid solidification followed by sintering. The collective atomic‐scale defect disorder improves the zT to 1.09 ± 0.12 at 800 K for the Ti0.5Hf0.5NiSn0.98Sb0.02 alloy. These results provide a promising avenue for improving the TE performance of state‐of‐the‐art materials.