通过X射线衍射和微探针分析研究了Ho-Ni-Ge系统在1070 K和高达60 at%Ho的情况下的情况。除了八种已知化合物外,HoNi 5 Ge 3(YNi 5 Si 3型),HoNi 2 Ge 2(CeAl 2 Ga 2型),Ho 2 NiGe 6(Ce 2 CuGe 6型),HoNiGe 3(SmNiGe 3)型),HoNi 0.2÷0.6 Ge 2(CeNiSi 2型),Ho 37÷34 Ni 6÷24 Ge 57÷42(AlB 2型),HoNiGe(TiNiSi型),Ho 3 NiGe 2(La 3 NiGe 2型),三元体系包含四个新化合物:Ho 3 Ni 11 Ge 4(Sc 3 Ni 11 Ge 4型),HoNi 3 Ge 2(ErNi 3 Ge 2型),Ho 3 Ni 2 Ge 3(Hf 3 Ni 2 Si 3型)和〜Ho 5 Ni 2 Ge 3(结构未知)。Ho 2 Ni
Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge
作者:F. Nemouchi、D. Mangelinck、C. Bergman、G. Clugnet、P. Gas、J. L. Lábár
DOI:10.1063/1.2358189
日期:2006.9.25
The reaction between nanometric Nifilms and Ge is analyzed using isothermal x-ray diffraction measurements and transmission electron microscopy. It is found that NiGe is formed during deposition at room temperature. The metal rich phase that grows during heat treatment has been clearly identified to be Ni5Ge3. The simultaneousgrowths of Ni5Ge3 and NiGe have been observed on amorphous and polycrystalline
使用等温 X 射线衍射测量和透射电子显微镜分析纳米 Ni 膜和 Ge 之间的反应。发现在室温下沉积期间形成NiGe。在热处理过程中生长的富金属相已被明确确定为 Ni5Ge3。在非晶和多晶锗上观察到 Ni5Ge3 和 NiGe 同时生长。这与薄膜中报道的通常顺序生长形成对比。