molybdenum mononitride

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: molybdenum mononitride
• 英文别名: molybdenum nitride；Azane;molybdenum
• 化学式: MoN
• 分子量: 109.947
• InChiKey: XMYHHSMIUHHPEW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.16
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  1
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  molybdenum mononitride 以 neat (no solvent, solid phase) 为溶剂， 生成 molybdenum nitride
  参考文献：
  名称：

  Synthesis and Characterization of Nanostructured Niobium and Molybdenum Nitrides by a Two-Step Transition Metal Halide Approach

  摘要：

  Nanosized NbNx (1.64 > x > 1.33) and MoNx (1.32 > x > 0.77) crystallites were synthesized at a relatively low temperature (>= 600 degrees C) through ammonolysis and nitridation of the corresponding metal chlorides. The ammonolysis reaction in anhydrous chloroform at room temperature and the nitridation mechanism during subsequent heat treatment was investigated using Fourier transform infrared spectroscopy, X-ray diffraction (XRD), thermogravimetric (TG), and mass spectroscopy analysis. The effects of the synthesis parameters on the stoichiometry, structure, specific surface area, density, and electronic conductivity of the final nitrides were studied using TGA, XRD, N-2 adsorption, high-resolution transmission microscopy, helium pycnometry, and four-point probe technique. Preliminary electrochemical responses of the obtained nitrides were studied using cyclic voltammetry to explore their possible use as electrochemical capacitors.

  DOI：

  10.1111/j.1551-2916.2011.04412.x
• 作为产物：
  描述：

  molybdenum nitride 1249.84 ℃ 、3500.05 MPa 条件下， 反应 0.25h， 生成 molybdenum mononitride
  参考文献：
  名称：

  A New Molybdenum Nitride Catalyst with Rhombohedral MoS₂ Structure for Hydrogenation Applications

  摘要：

  Nitrogen-rich transition-metal nitrides hold great promise to be the next-generation catalysts for clean and renewable energy applications. However, incorporation of nitrogen into the crystalline lattices of transition metals is thermodynamically unfavorable at atmospheric pressure; most of the known transition metal nitrides are nitrogen-deficient with molar ratios of N:metal less than a unity. In this work, we have formulated a high-pressure route for the synthesis of a nitrogen-rich molybdenum nitride through a solid-state ion-exchange reaction. The newly discovered nitride, 3R-MoN2, adopts a rhombohedral R3m structure, isotypic with MoS2. This new nitride exhibits catalytic activities that are three times more active than the traditional catalyst MoS2 for the hydrodesulfurization of dibenzothiophene and more than twice as high in the selectivity to hydrogenation. The nitride is also catalytically active in sour methanation of syngas with >80% CO and H-2 conversion at 723 K. Our formulated route for the synthesis of 3R-MoN2 is at a moderate pressure of 3.5 GPa and, thus, is feasible for industrial-scale catalyst production.

  DOI：

  10.1021/jacs.5b01446
• 作为试剂：
  描述：

  乙烷 在 molybdenum mononitride 作用下， 生成 乙烯
  参考文献：
  名称：

  多孔单晶中的扭曲表面可提供增强的催化活性和稳定性。

  摘要：

  结合有序晶格结构和无序互连孔的多孔单晶将为在多孔微结构中产生扭曲的表面提供另一种选择。现在，过渡金属氮化物Nb 4 N 5和MoN单晶以2 cm的规模生长，以在扭曲的表面上创建清晰的有源结构。观察到较高的催化活性和乙烷对乙烷非氧化脱氢的稳定性。不饱和金属-氮配位结构，包括Nb-N 1/ 5，Nb-N 2/ 5，Mo-N 1/3和Mo-N 1/6在扭曲的表面上，主要是由于扭曲表面上的分子乙烷中H的化学吸附导致了CH活化，这不仅提高了脱氢性能，而且避免了乙烷的深度裂化，从而提高了耐焦化性。在运行50小时后，乙烷转化率为11–25％，乙烯选择性为98–99％，未观察到降解。

  DOI：

  10.1002/anie.202006299

文献信息

• Infrared Spectra, Structure, and Bonding of the Group 6 and Ammonia M:NH₃, H₂N−MH, and N≡MH₃ Reaction Products in Solid Argon
  作者：Xuefeng Wang、Lester Andrews

  DOI：10.1021/om8003459

  日期：2008.10.13

  undergo oxidative addition reactions with ammonia during condensation in excess argon. The subject molecules were trapped in solid argon and identified by isotopic shifts and DFT frequency calculations. The 1:1 metal−ammonia complexes increased on annealing and photoisomerized to H2N−MH and then to N≡MoH3 and N≡WH3, but N≡CrH3 is too high in energy to be formed here. These products also increased slightly

  激光烧蚀后的铬，钼和钨原子在过量的氩气中冷凝时会与氨发生氧化加成反应。将目标分子捕获在固体氩气中，并通过同位素位移和DFT频率计算进行鉴定。1：1的金属-氨络合物增加了退火和photoisomerized至H 2的N- MH然后N≡MoH 3和N≡WH 3，但N≡CrH 3是过高的能量在这里形成。这些产物在退火时也略有增加，这表明第6族金属原子与氨之间的自发反应。该N≡MoH 3和N≡WH 3 分子包含完全形成的三键，有效键序为2.91和2.92（使用B3LYP密度泛函计算）和末端金属氮化物键长，与针对较大有机金属配合物测得的长度一致。
• Co-precipitate precursor-based synthesis of new interstitial niobium molybdenum nitrides
  作者：Abdelouahad El Himri、Mamoune El Himri、Domingo Pérez-Coll、Pedro Núñez

  DOI：10.1007/s11164-014-1749-8

  日期：2015.9

  A simple method of preparation of interstitial niobium molybdenum nitride solid solutions in the series Nb1−x Mo x N y (x = 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) has been developed. It is based on direct ammonolysis of precursors resulting from co-precipitation of aqueous solutions of the appropriate common metal salts. A study of the effect of method conditions on the outcome of the procedure is presented. Compounds in this series were prepared as single phases by nitridation at 1,173 K followed by rapid cooling of the samples. Similarly to the individual nitrides NbN and Mo2N, all the Nb1−x Mo x N y compounds in this series have the rock-salt crystal structure in which the metal atoms are in an fcc arrangement with N atoms occupying octahedral interstitial positions. The materials were characterized by X-ray powder diffraction, elemental analysis, scanning electron microscopy, and thermogravimetry under oxygen flow.

  现已开发出一种制备 Nb1-x Mo x N y（x = 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0）系列间隙氮化铌钼固溶体的简单方法。该方法基于对适当常见金属盐水溶液共沉淀产生的前驱体的直接氨解。本文介绍了方法条件对程序结果影响的研究。该系列化合物是通过在 1,173 K 下进行氮化，然后快速冷却样品制备成单相的。与单个氮化物 NbN 和 Mo2N 相似，该系列中的所有 Nb1-x Mo x N y 化合物都具有岩盐晶体结构，其中金属原子呈 fcc 排列，N 原子占据八面体间隙位置。这些材料通过 X 射线粉末衍射、元素分析、扫描电子显微镜和氧气流动下的热重分析进行了表征。
• NH3-treated MoS2 nanosheets as photocatalysts for enhanced H2 evolution under visible-light irradiation
  作者：Jinwen Shi、Yazhou Zhang、Yuchao Hu、Xiangjiu Guan、Zhaohui Zhou、Liejin Guo

  DOI：10.1016/j.jallcom.2016.07.053

  日期：2016.12

  Abstract MoS 2 is widely applied in photocatalytic H 2 evolution to function as an efficient cocatalyst, whereas it is not yet reported that this material acted as an effective host photocatalyst in this field. Herein, MoS 2 nanosheets were prepared by a general hydrothermal process at first, and then treated with flowing NH 3 at temperatures from 400 to 900 °C to develop a series of novel MoS 2 -based

  摘要 MoS 2 被广泛应用于光催化H 2 析出，作为一种高效的助催化剂，但目前尚未报道该材料在该领域中作为有效的主体光催化剂。在此，MoS 2 纳米片首先通过一般的水热法制备，然后在 400 至 900 °C 的温度下用流动的 NH 3 处理，开发了一系列新型 MoS 2 基光催化剂，该催化剂对 H 2 表现出相当大的光催化活性。可见光照射下的演化。从光催化剂理化性质的不同仪器表征推断，高温NH 3 处理提高光催化活性的主要原因是N对表面性质（如电性质和酸碱性质）的改变，促进了反应物的吸附，进一步加速了光催化反应。这项工作提出了一种有效的途径，通过修改通常用作助催化剂的适当材料来探索新的 H 2 析出光催化剂。
• Atomic Layer Deposition of Molybdenum Nitride Thin Films for Cu Metallizations
  作者：Petra Alén、Mikko Ritala、Kai Arstila、Juhani Keinonen、Markku Leskelä

  DOI：10.1149/1.1882012

  日期：——

  Molybdenum nitride thin films were deposited by the atomic layer deposition technique within a temperature range of 350-500°C from molybdenum pentachloride and ammonia. The films were characterized by time-of-flight elastic recoil detection analysis, X-ray diffraction (XRD), and standard four-point probe method. MON x films deposited at 400°C and above had a resistivity below 500 μΩ cm and the chlorine

  氮化钼薄膜是通过原子层沉积技术在 350-500°C 的温度范围内由五氯化钼和氨沉积而成的。通过飞行时间弹性反冲检测分析、X 射线衍射 (XRD) 和标准四点探针法对薄膜进行了表征。在 400°C 及以上沉积的 MON x 膜具有低于 500 μΩ cm 的电阻率和低于 0.3 原子% 的氯含量。从在 350、400 和 500°C 下沉积的大约 10 nm 厚的 MoN x 膜研究扩散阻挡特性。此外，阻挡测试是使用在 400°C 下沉积的 Mo(Ta)N 和 Mo(Ti)N 薄膜进行的。通过测量薄层电阻值、XRD 数据和执行蚀刻坑测试，从退火的 Cu/势垒/Si 结构研究势垒层的稳定性。氮化钼被证明是一种很有前途的扩散阻挡材料。观察到在 400 和 500°C 沉积的 MoN x 势垒仅在 650°C 退火后失效。
• Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films
  作者：Marika Juppo、Mikko Ritala、Markku Leskelä

  DOI：10.1149/1.1393909

  日期：——

  Atomic layer deposition (ALD) of TiN, TaN x , NbN, and MoN x thin films from the corresponding metal chlorides and 1,1-dimethylhydrazine (DMHy) was studied. Generally, the films deposited at 400°C exhibited better characteristics compared to the films deposited at the same temperature using NH 3 as the nitrogen source. In addition, films could be deposited at lower temperatures down to 200°C. Even

  研究了来自相应金属氯化物和 1,1-二甲基肼 (DMHy) 的 TiN、TaN x 、NbN 和 MoN x 薄膜的原子层沉积 (ALD)。通常，与使用NH 3 作为氮源在相同温度下沉积的膜相比，在400℃下沉积的膜表现出更好的特性。此外，薄膜可以在低至 200°C 的较低温度下沉积。尽管薄膜中的碳含量非常高，在 10 原子％的范围内，但结果鼓励进一步研究。尤其应该研究碳对阻隔性能的影响以及其他可能较少碳污染的肼衍生物的使用。